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W27E512-12A

Specifications

SKU: 11775054

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Parameter Description Value Unit
Device Type Non-volatile memory device 512 Kbit (64 K x 8) -
Operating Voltage Supply voltage range 2.7 to 3.6 V
Standby Current Current consumption in standby mode 1 μA
Active Current Current consumption during read/write 5 mA
Write Time Time required for a full sector erase 40 ms
Page Program Time Time required for a page program operation 200 μs
Endurance Number of guaranteed write/erase cycles per sector 100,000 -
Data Retention Guaranteed data retention time 10 years
Operating Temperature Range of operating temperatures -40 to +85 °C
Package Type Physical package type SOIC-8 -
Organization Memory organization 64K x 8 -

Instructions:

  1. Power Supply:

    • Ensure the supply voltage is within the specified range of 2.7V to 3.6V.
  2. Pin Configuration:

    • Refer to the datasheet for the pin configuration of the SOIC-8 package.
  3. Initialization:

    • Before performing any read or write operations, ensure the device is properly initialized by applying the correct power supply and ground connections.
  4. Read Operation:

    • To read data from the memory, set the appropriate address lines and enable the read command.
    • The data will be available on the data lines after a short delay.
  5. Write Operation:

    • To write data to the memory, first issue a write enable command.
    • Set the address and data lines, then issue the write command.
    • Wait for the write cycle to complete before initiating another operation.
  6. Erase Operation:

    • To erase a sector, issue a sector erase command followed by the address of the sector to be erased.
    • Wait for the erase cycle to complete, which typically takes 40 milliseconds.
  7. Standby Mode:

    • To enter standby mode, disable all active commands and reduce the current consumption to 1 μA.
  8. Temperature Considerations:

    • Ensure the device operates within the temperature range of -40°C to +85°C to avoid damage or data corruption.
  9. Endurance and Data Retention:

    • The device is rated for 100,000 write/erase cycles per sector and guarantees data retention for up to 10 years.
  10. Handling:

    • Handle the device with care to avoid static discharge and physical damage.
    • Follow proper handling procedures as outlined in the datasheet.
(For reference only)

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