Specifications
SKU: 12369977
Parameter | Description | Value |
---|---|---|
Device Type | Flash Memory | 2 Mbit (256K x 8) |
Package | TSOP-48 | - |
Operating Voltage (Vcc) | Supply Voltage | 2.7 V to 3.6 V |
Temperature Range | Operating Temperature | -40°C to +85°C |
Data Retention | Data Retention Time | 10 years |
Programming Time | Typical Programming Time per Byte | 200 μs |
Erase Time | Typical Erase Time per Sector | 1.5 s |
Write Cycles | Endurance | 100,000 cycles |
Read Cycles | Read Endurance | Unlimited |
Access Time | Typical Access Time | 70 ns |
Sector Size | Sector Size for Erase | 64 Kbit (8 Kbyte) |
Block Size | Block Size for Erase | 128 Kbit (16 Kbyte) |
Chip Enable | Active Low | - |
Output Enable | Active Low | - |
Write Enable | Active Low | - |
Write Protect | Active High | - |
Power Consumption | Active Read Current | 30 mA |
Power Consumption | Standby Current | 1 μA |
Instructions
Power Supply:
- Ensure the supply voltage (Vcc) is within the range of 2.7 V to 3.6 V.
- Connect Vss to ground.
Pin Configuration:
- Vcc: Power supply
- Vss: Ground
- A0-A17: Address lines
- DQ0-DQ7: Data I/O lines
- OE#: Output enable (active low)
- WE#: Write enable (active low)
- CE#: Chip enable (active low)
- WP#: Write protect (active high)
Initialization:
- Apply power and ensure all control signals (CE#, OE#, WE#, WP#) are set to their default states.
- CE# should be low to select the device.
- OE# should be low to enable data output.
- WE# should be high to prevent writing.
- WP# should be low to allow writing.
Reading Data:
- Set CE# low to select the device.
- Set OE# low to enable data output.
- Apply the desired address to A0-A17.
- Data will appear on DQ0-DQ7 after the access time (70 ns).
Writing Data:
- Set CE# low to select the device.
- Set WE# low to enable writing.
- Apply the desired address to A0-A17.
- Apply the data to be written to DQ0-DQ7.
- Hold WE# low for the programming time (200 μs).
- Return WE# to high to complete the write cycle.
Erasing Sectors/Blocks:
- Set CE# low to select the device.
- Set WE# low to enable writing.
- Apply the appropriate command sequence for sector/block erase.
- Hold WE# low for the erase time (1.5 s).
- Return WE# to high to complete the erase cycle.
Write Protection:
- Set WP# high to prevent any write or erase operations.
- Set WP# low to allow write and erase operations.
Power Down:
- Set CE# high to deselect the device.
- Set Vcc to 0 V to power down the device.
Notes:
- Always refer to the datasheet for detailed timing diagrams and specific command sequences.
- Ensure proper handling and storage to avoid damage from electrostatic discharge (ESD).
Inquiry - M29F200BB70M3