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M29F200BB70M3

Specifications

SKU: 12369977

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Parameter Description Value
Device Type Flash Memory 2 Mbit (256K x 8)
Package TSOP-48 -
Operating Voltage (Vcc) Supply Voltage 2.7 V to 3.6 V
Temperature Range Operating Temperature -40°C to +85°C
Data Retention Data Retention Time 10 years
Programming Time Typical Programming Time per Byte 200 μs
Erase Time Typical Erase Time per Sector 1.5 s
Write Cycles Endurance 100,000 cycles
Read Cycles Read Endurance Unlimited
Access Time Typical Access Time 70 ns
Sector Size Sector Size for Erase 64 Kbit (8 Kbyte)
Block Size Block Size for Erase 128 Kbit (16 Kbyte)
Chip Enable Active Low -
Output Enable Active Low -
Write Enable Active Low -
Write Protect Active High -
Power Consumption Active Read Current 30 mA
Power Consumption Standby Current 1 μA

Instructions

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the range of 2.7 V to 3.6 V.
    • Connect Vss to ground.
  2. Pin Configuration:

    • Vcc: Power supply
    • Vss: Ground
    • A0-A17: Address lines
    • DQ0-DQ7: Data I/O lines
    • OE#: Output enable (active low)
    • WE#: Write enable (active low)
    • CE#: Chip enable (active low)
    • WP#: Write protect (active high)
  3. Initialization:

    • Apply power and ensure all control signals (CE#, OE#, WE#, WP#) are set to their default states.
    • CE# should be low to select the device.
    • OE# should be low to enable data output.
    • WE# should be high to prevent writing.
    • WP# should be low to allow writing.
  4. Reading Data:

    • Set CE# low to select the device.
    • Set OE# low to enable data output.
    • Apply the desired address to A0-A17.
    • Data will appear on DQ0-DQ7 after the access time (70 ns).
  5. Writing Data:

    • Set CE# low to select the device.
    • Set WE# low to enable writing.
    • Apply the desired address to A0-A17.
    • Apply the data to be written to DQ0-DQ7.
    • Hold WE# low for the programming time (200 μs).
    • Return WE# to high to complete the write cycle.
  6. Erasing Sectors/Blocks:

    • Set CE# low to select the device.
    • Set WE# low to enable writing.
    • Apply the appropriate command sequence for sector/block erase.
    • Hold WE# low for the erase time (1.5 s).
    • Return WE# to high to complete the erase cycle.
  7. Write Protection:

    • Set WP# high to prevent any write or erase operations.
    • Set WP# low to allow write and erase operations.
  8. Power Down:

    • Set CE# high to deselect the device.
    • Set Vcc to 0 V to power down the device.

Notes:

  • Always refer to the datasheet for detailed timing diagrams and specific command sequences.
  • Ensure proper handling and storage to avoid damage from electrostatic discharge (ESD).
(For reference only)

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