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FT3120-E4S40

Specifications

SKU: 12375401

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Parameter Description Value
Part Number Full Part Number FT3120-E4S40
Type Device Type Flash Memory
Memory Size Total Memory Capacity 512 Mbit
Organization Memory Organization (M x N) 64M x 8
Voltage - Supply (Vcc) Operating Supply Voltage Range 2.7 V to 3.6 V
Interface Communication Interface SPI
Speed Maximum Clock Frequency 104 MHz
Operating Temperature Temperature Range for Operation -40°C to +85°C
Package Package Type WSON-8
Pin Count Number of Pins 8
Standby Current Current Consumption in Standby Mode 1 μA
Active Current Current Consumption in Active Mode 25 mA
Write Protect Write Protection Mechanism Software/ Hardware
Endurance Number of Program/Erase Cycles 100,000
Data Retention Data Retention Time 20 years

Instructions

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the specified range of 2.7 V to 3.6 V.
    • Connect the Vcc pin to the power supply and GND pin to ground.
  2. Communication:

    • Use the SPI interface for communication.
    • Connect the SPI pins (CS, SCK, MOSI, MISO) to the corresponding pins on your microcontroller or controller.
  3. Initialization:

    • Before performing any read/write operations, initialize the device by sending the appropriate SPI commands.
    • Refer to the device datasheet for specific initialization sequences.
  4. Read Operations:

    • To read data from the memory, send the read command followed by the address and then read the data from the MISO line.
  5. Write Operations:

    • To write data to the memory, first send the write enable command.
    • Then send the write command followed by the address and the data to be written.
    • After writing, send the write disable command to prevent accidental writes.
  6. Write Protect:

    • Enable software or hardware write protection to prevent unintended writes.
    • For software protection, use the write protect register.
    • For hardware protection, connect the WP pin to Vcc or GND as required.
  7. Standby Mode:

    • To enter standby mode, set the CS pin high.
    • In standby mode, the device consumes minimal power (1 μA).
  8. Endurance and Data Retention:

    • The device can withstand up to 100,000 program/erase cycles.
    • Data retention is guaranteed for 20 years under normal operating conditions.
  9. Handling:

    • Handle the device with care to avoid static damage.
    • Follow proper ESD (Electrostatic Discharge) precautions during handling and installation.
  10. Storage:

    • Store the device in a dry, cool place to ensure long-term reliability.

For detailed command sequences and timing diagrams, refer to the device datasheet.

(For reference only)

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