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SI2324A-TP

Specifications

SKU: 12379136

BUY SI2324A-TP https://www.utsource.net/itm/p/12379136.html

Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDS -55 - 55 V Maximum voltage between drain and source with gate open
Gate-Source Voltage VGS -10 - 10 V Maximum voltage between gate and source
Continuous Drain Current ID - 2.8 3.2 A Continuous drain current at TA = 25°C
Pulse Drain Current ID(pulse) - 7.0 9.0 A Pulse drain current (tp = 300 μs, fr ≤ 1 kHz)
Gate Charge QG - 10 15 nC Total gate charge
Input Capacitance Ciss - 650 900 pF Input capacitance
Output Capacitance Coss - 170 230 pF Output capacitance
Reverse Transfer Capacitance Crss - 120 160 pF Reverse transfer capacitance
RDS(on) @ VGS = 4.5V RDS(on) - 0.07 0.10 Ω On-state resistance at VGS = 4.5V
RDS(on) @ VGS = 2.5V RDS(on) - 0.10 0.15 Ω On-state resistance at VGS = 2.5V
Threshold Voltage VGS(th) 0.8 1.2 1.6 V Gate threshold voltage
Power Dissipation PD - - 1.5 W Maximum power dissipation at TA = 25°C
Junction Temperature TJ - - 150 °C Maximum junction temperature
Storage Temperature TSTG -55 - 150 °C Operating temperature range

Instructions for Use

  1. Mounting and Handling:

    • Handle the device with care to avoid damage to the leads and body.
    • Ensure that the device is mounted on a suitable heat sink if operating near its maximum power dissipation.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly to avoid damage.
    • Use appropriate decoupling capacitors to stabilize the power supply and reduce noise.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified limits to ensure reliable operation.
    • Ensure that the gate drive circuitry provides sufficient current to charge and discharge the gate capacitance quickly.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
    • Use thermal paste or thermal interface materials to improve heat transfer from the device to the heat sink.
  5. Pulsed Operation:

    • For pulsed applications, ensure that the pulse duration and frequency do not exceed the specified limits to avoid overheating.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat.
    • Protect the device from static electricity by using anti-static packaging and handling procedures.
  7. Testing:

    • Test the device under controlled conditions to verify its performance and reliability.
    • Follow the recommended test procedures and conditions provided in the datasheet.
  8. Safety:

    • Always follow safe electrical practices when working with high voltages and currents.
    • Use appropriate personal protective equipment (PPE) as needed.
(For reference only)

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