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GB98TDN

Specifications

SKU: 12394493

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Parameter Description Value
Part Number GB98TDN -
Type N-Channel MOSFET -
VDS (Max) Drain-to-Source Voltage 60V
VGS (Max) Gate-to-Source Voltage ±20V
ID (Max) Continuous Drain Current 10A
Ptot (Max) Total Power Dissipation (Tc = 25°C) 100W
RDS(on) On-State Resistance (VGS = 10V) 0.015Ω
fT Transition Frequency 350MHz
QG Gate Charge 50nC
QGD Gate-to-Drain Charge 15nC
QGS Gate-to-Source Charge 10nC
td(on) Turn-On Delay Time 15ns
tr Rise Time 10ns
td(off) Turn-Off Delay Time 20ns
tf Fall Time 15ns
θJA Junction-to-Ambient Thermal Resistance 62.5°C/W
θJC Junction-to-Case Thermal Resistance 3.5°C/W
Operating Temperature Range Junction Temperature (TJ) -55°C to +175°C
Storage Temperature Range Storage Temperature (TSTG) -65°C to +150°C

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid damage to the leads or the body.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting:

    • Ensure that the mounting surface is flat and clean to ensure good thermal contact.
    • Apply a suitable thermal compound between the device and the heatsink to improve heat dissipation.
  3. Biasing:

    • Ensure that the gate-to-source voltage (VGS) is within the specified limits to prevent damage.
    • Use appropriate gate drive circuits to ensure fast and reliable switching.
  4. Power Dissipation:

    • Calculate the power dissipation based on the load current and RDS(on) to ensure the device operates within safe limits.
    • Use a heatsink if necessary to keep the junction temperature within the operating range.
  5. Switching Applications:

    • For high-frequency switching applications, minimize parasitic inductances and capacitances in the circuit layout.
    • Ensure that the gate drive circuit can provide sufficient current to charge and discharge the gate quickly.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat.
    • Follow the storage temperature range to prevent degradation of the device.
  7. Testing:

    • Use appropriate test equipment and methods to verify the device parameters.
    • Do not exceed the maximum ratings during testing to avoid damaging the device.
(For reference only)

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