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MMBT4403

Specifications

SKU: 12399504

BUY MMBT4403 https://www.utsource.net/itm/p/12399504.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage (Reverse) VCEO - 50 - V
Collector-Base Voltage (Reverse) VCBO - 60 - V
Emitter-Base Voltage (Reverse) VEBO - 5 - V
Collector Current (Continuous) IC - 100 - mA
Collector Current (Pulse) ICM - 200 - mA
Base Current (Continuous) IB - 5 - mA
Power Dissipation PT - 310 - mW
Operating Junction Temperature TJ -40 - 150 °C
Storage Temperature Range TSTG -65 - 150 °C
Forward Current Transfer Ratio (hFE) hFE 100 300 800 -
Collector-Emitter Saturation Voltage VCE(sat) - 0.2 0.4 V
Base-Emitter Saturation Voltage VBE(sat) - 0.7 1.2 V
Transition Frequency fT - 300 - MHz

Instructions for Using MMBT4403:

  1. Handling Precautions:

    • Handle with care to avoid damage.
    • Use appropriate anti-static measures to prevent electrostatic discharge (ESD).
  2. Mounting:

    • Ensure proper alignment of the leads during soldering.
    • Soldering temperature should not exceed 260°C for more than 10 seconds.
    • Avoid excessive mechanical stress on the leads.
  3. Operating Conditions:

    • Ensure that the operating conditions (voltage, current, and temperature) do not exceed the maximum ratings.
    • For reliable operation, keep the junction temperature within the specified range.
  4. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Follow recommended storage temperature ranges to prevent damage.
  5. Testing:

    • Use a multimeter or transistor tester to verify the functionality.
    • Test under controlled conditions to avoid damaging the component.
  6. Applications:

    • Suitable for general-purpose switching and amplification applications.
    • Commonly used in consumer electronics, automotive, and industrial control systems.

By following these guidelines, you can ensure the reliable and efficient use of the MMBT4403 transistor.

(For reference only)

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