Share:
Specifications
SKU: 12404031
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | - | - | 500 | V | Maximum voltage between collector and emitter with the base open. |
| Emitter-Collector Voltage | VEC | - | - | 500 | V | Maximum voltage between emitter and collector with the base open. |
| Base-Emitter Voltage | VBE | - | - | 7 | V | Maximum voltage between base and emitter. |
| Collector Current | IC | - | - | 13 | A | Maximum continuous collector current. |
| Power Dissipation | PTOT | - | - | 200 | W | Maximum total power dissipation. |
| Junction Temperature | TJ | -20 | - | 150 | °C | Operating junction temperature range. |
| Storage Temperature | TSTG | -55 | - | 150 | °C | Storage temperature range. |
| Thermal Resistance, Junction to Case | RθJC | - | - | 0.8 | °C/W | Thermal resistance from junction to case. |
| Transition Frequency | fT | - | 4 | - | MHz | Frequency at which the current gain drops to unity. |
Instructions for Use:
Mounting:
- Ensure proper heat sinking if operating near maximum power dissipation.
- Use recommended mounting torque for screws to avoid damaging the device.
Biasing:
- Apply a suitable base current to ensure the transistor is fully saturated when in the on state.
- Avoid exceeding the maximum base-emitter voltage (VBE).
Operation:
- Do not exceed the maximum collector-emitter voltage (VCE) or collector current (IC).
- Monitor the junction temperature (TJ) to prevent overheating.
Storage:
- Store in a dry environment within the specified storage temperature range (TSTG).
Handling:
- Handle with care to avoid mechanical damage.
- Use appropriate ESD protection to prevent damage from static electricity.
Testing:
- Use recommended test conditions to ensure accurate measurement of parameters.
- Refer to the datasheet for detailed test conditions and procedures.
Inquiry - ZXT13N50DE6TA
