Instructions for Use:

1. Operating Conditions:

   • Ensure that the drain-source voltage (VDS) does not exceed 30V.
   • The continuous drain current (ID) should not exceed 28A at a case temperature (TC) of 25°C.
   • For pulse operations, the pulse drain current (ID(P)) can reach up to 90A for a duration of 300 μs at a case temperature of 25°C.

2. Thermal Management:

   • The junction temperature (TJ) must be kept within the range of -55°C to 175°C.
   • Proper heat sinking is recommended to manage power dissipation, especially when operating near the maximum power dissipation (PD) of 125W.

3. Gate Drive:

   • Apply a gate-source voltage (VGS) between -10V and 12V.
   • The threshold voltage (VGS(th)) ranges from 1.5V to 3.5V, so ensure the gate drive circuit provides sufficient voltage to fully turn on the MOSFET.

4. Capacitance Considerations:

   • The input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) should be considered in high-frequency applications to minimize switching losses.

5. Storage:

   • Store the device in a dry environment with temperatures between -65°C and 150°C.

6. Handling:

   • Handle the device with care to avoid static discharge, which can damage the MOSFET.
   • Follow proper ESD (Electrostatic Discharge) precautions during assembly and testing.