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BTA26-800B

Specifications

SKU: 12442848

BUY BTA26-800B https://www.utsource.net/itm/p/12442848.html

Parameter Symbol Min Typical Max Unit
Rated RMS On-State Current IT(RMS) - 16 - A
Peak On-State Current ITSM - 80 - A
On-State Voltage Drop at 25°C VT 1.0 - 1.4 V
Holding Current IH 10 - 20 mA
Gate Trigger Current IG(T) 10 - 30 mA
Gate Trigger Voltage VG(T) 1.0 - 2.0 V
Maximum Repetitive Peak Off-State Voltage VDRM 800 - - V
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure the BTA26-800B is securely mounted to a heatsink if continuous high current operation is expected.
    • Use a thermal compound between the device and the heatsink to improve heat dissipation.
  2. Gate Triggering:

    • Apply a gate trigger current (IG(T)) of at least 10 mA to ensure reliable turn-on.
    • The gate trigger voltage (VG(T)) should be within 1.0 to 2.0 V.
  3. Current Handling:

    • Do not exceed the rated RMS on-state current (IT(RMS)) of 16 A.
    • For peak currents, do not exceed 80 A (ITSM).
  4. Temperature Management:

    • Monitor the junction temperature (TJ) to ensure it stays within -55°C to 150°C.
    • Store the device in an environment where the temperature ranges from -55°C to 150°C (TSTG).
  5. Voltage Ratings:

    • Ensure the maximum repetitive peak off-state voltage (VDRM) does not exceed 800 V.
  6. Holding Current:

    • Maintain a holding current (IH) of at least 10 mA to keep the device in the on state.
  7. Testing:

    • Before final assembly, test the device under conditions similar to those expected in the final application to ensure proper operation.
  8. Handling:

    • Handle the BTA26-800B with care to avoid mechanical damage or static discharge.
    • Use appropriate ESD protection measures when handling the device.
(For reference only)

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