Specifications
SKU: 12442848
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Rated RMS On-State Current | IT(RMS) | - | 16 | - | A |
Peak On-State Current | ITSM | - | 80 | - | A |
On-State Voltage Drop at 25°C | VT | 1.0 | - | 1.4 | V |
Holding Current | IH | 10 | - | 20 | mA |
Gate Trigger Current | IG(T) | 10 | - | 30 | mA |
Gate Trigger Voltage | VG(T) | 1.0 | - | 2.0 | V |
Maximum Repetitive Peak Off-State Voltage | VDRM | 800 | - | - | V |
Junction Temperature | TJ | -55 | - | 150 | °C |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure the BTA26-800B is securely mounted to a heatsink if continuous high current operation is expected.
- Use a thermal compound between the device and the heatsink to improve heat dissipation.
Gate Triggering:
- Apply a gate trigger current (IG(T)) of at least 10 mA to ensure reliable turn-on.
- The gate trigger voltage (VG(T)) should be within 1.0 to 2.0 V.
Current Handling:
- Do not exceed the rated RMS on-state current (IT(RMS)) of 16 A.
- For peak currents, do not exceed 80 A (ITSM).
Temperature Management:
- Monitor the junction temperature (TJ) to ensure it stays within -55°C to 150°C.
- Store the device in an environment where the temperature ranges from -55°C to 150°C (TSTG).
Voltage Ratings:
- Ensure the maximum repetitive peak off-state voltage (VDRM) does not exceed 800 V.
Holding Current:
- Maintain a holding current (IH) of at least 10 mA to keep the device in the on state.
Testing:
- Before final assembly, test the device under conditions similar to those expected in the final application to ensure proper operation.
Handling:
- Handle the BTA26-800B with care to avoid mechanical damage or static discharge.
- Use appropriate ESD protection measures when handling the device.
Inquiry - BTA26-800B