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2SA1859

Specifications

SKU: 12443321

BUY 2SA1859 https://www.utsource.net/itm/p/12443321.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCE - - 60 V
Emitter-Base Voltage VEB - - 5 V
Collector Current IC - 100 300 mA
Base Current IB - - 30 mA
Power Dissipation PT - - 1000 mW
Transition Frequency fT - 200 400 MHz
Storage Temperature Range TSTG -55 - 150 °C
Operating Temperature Range TA -10 - 100 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking if operating near maximum power dissipation.
    • Avoid mechanical stress on the leads during soldering and handling.
  2. Electrical Connections:

    • Connect the collector (C) to the load or power supply.
    • Connect the emitter (E) to ground or the common point.
    • Apply the base (B) current to control the transistor.
  3. Biasing:

    • Use appropriate biasing circuits to ensure stable operation.
    • Ensure the base-emitter voltage (VBE) is within the specified range to avoid damage.
  4. Protection:

    • Use reverse-biased diodes to protect against transient voltages.
    • Consider using series resistors to limit base current and prevent overdrive.
  5. Handling:

    • Handle with care to avoid static discharge which can damage the transistor.
    • Store in a dry, cool place away from direct sunlight.
  6. Testing:

    • Test the transistor in a controlled environment to ensure it meets the specified parameters.
    • Use a multimeter or transistor tester to verify the functionality before installation.
(For reference only)

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