Specifications
SKU: 12443321
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 60 | V |
Emitter-Base Voltage | VEB | - | - | 5 | V |
Collector Current | IC | - | 100 | 300 | mA |
Base Current | IB | - | - | 30 | mA |
Power Dissipation | PT | - | - | 1000 | mW |
Transition Frequency | fT | - | 200 | 400 | MHz |
Storage Temperature Range | TSTG | -55 | - | 150 | °C |
Operating Temperature Range | TA | -10 | - | 100 | °C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking if operating near maximum power dissipation.
- Avoid mechanical stress on the leads during soldering and handling.
Electrical Connections:
- Connect the collector (C) to the load or power supply.
- Connect the emitter (E) to ground or the common point.
- Apply the base (B) current to control the transistor.
Biasing:
- Use appropriate biasing circuits to ensure stable operation.
- Ensure the base-emitter voltage (VBE) is within the specified range to avoid damage.
Protection:
- Use reverse-biased diodes to protect against transient voltages.
- Consider using series resistors to limit base current and prevent overdrive.
Handling:
- Handle with care to avoid static discharge which can damage the transistor.
- Store in a dry, cool place away from direct sunlight.
Testing:
- Test the transistor in a controlled environment to ensure it meets the specified parameters.
- Use a multimeter or transistor tester to verify the functionality before installation.
Inquiry - 2SA1859