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Specifications
SKU: 12444965
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 650 | - | V | - |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Continuous Drain Current | ID | - | 10 | - | A | TC = 25°C, VDS = 650V |
| Pulse Drain Current | IDpeak | - | 30 | - | A | tp = 10μs, Duty Cycle ≤ 1% |
| Total Power Dissipation | PTOT | - | 150 | - | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
| Thermal Resistance, Junction to Case | RθJC | - | 0.5 | - | °C/W | - |
| Input Capacitance | Ciss | - | 1500 | - | pF | VDS = 400V, f = 1MHz |
| Output Capacitance | Coss | - | 250 | - | pF | VDS = 400V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 100 | - | pF | VDS = 400V, f = 1MHz |
| Gate Charge | QG | - | 60 | - | nC | VGS = 15V, VDS = 400V, ID = 10A |
| Threshold Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | ID = 1mA, TA = 25°C |
| On-State Resistance | RDS(on) | - | 0.7 | - | Ω | VGS = 10V, ID = 10A, TA = 25°C |
Instructions for Use:
Handling and Storage:
- Store in a dry environment with a temperature range of -55°C to 150°C.
- Handle with care to avoid mechanical damage.
Mounting:
- Ensure proper heat sinking to maintain junction temperature below 150°C.
- Use appropriate mounting hardware to secure the device.
Electrical Connections:
- Connect the drain, source, and gate terminals as specified in the circuit design.
- Ensure that the gate-source voltage (VGS) does not exceed ±20V to prevent damage.
Operating Conditions:
- Do not exceed the maximum drain-source voltage (VDS) of 650V.
- Limit the continuous drain current (ID) to 10A at a case temperature of 25°C.
- For pulse operation, ensure the pulse duration (tp) is within 10μs and the duty cycle is ≤1%.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it remains below 150°C.
- Use thermal resistance (RθJC) data to calculate heat dissipation requirements.
Capacitance and Charge:
- Consider the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) when designing the circuit to minimize switching losses.
- Account for the gate charge (QG) in the gate driver design to optimize switching performance.
Threshold Voltage and On-State Resistance:
- The threshold voltage (VGS(th)) should be between 2.0V and 6.0V to ensure reliable turn-on.
- The on-state resistance (RDS(on)) should be monitored to ensure efficient operation, especially under high current conditions.
Testing and Validation:
- Perform thorough testing under various operating conditions to validate the performance and reliability of the device.
- Follow recommended test procedures to ensure accurate measurement of device parameters.
Inquiry - TF7N65
