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M27C512-10F1

Specifications

SKU: 12445107

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Parameter Description Value Unit
Type Memory Type UV-Erasable PROM -
Capacity Memory Size 64K x 8 -
Organization Memory Organization 8,192 x 8 -
Supply Voltage (Vcc) Operating Voltage 4.5 to 5.5 V
Supply Current (Vcc) Active Mode 25 mA
Supply Current (Vcc) Standby Mode 1 μA
Access Time Typical Access Time 100 ns
Programming Voltage (Vpp) Programming Voltage 12.5 to 21 V
Programming Time Typical Programming Time 10 ms
Erase Time Typical Erase Time 10 s
Operating Temperature Industrial Range -40 to +85 °C
Package Package Type 28-pin PDIP, 28-pin PLCC -
Pin Configuration Pin 1 Output Enable (OE) -
Pin Configuration Pin 2 Address Line A0 -
Pin Configuration Pin 3 Address Line A1 -
Pin Configuration Pin 4 Address Line A2 -
Pin Configuration Pin 5 Address Line A3 -
Pin Configuration Pin 6 Address Line A4 -
Pin Configuration Pin 7 Address Line A5 -
Pin Configuration Pin 8 Address Line A6 -
Pin Configuration Pin 9 Address Line A7 -
Pin Configuration Pin 10 Address Line A8 -
Pin Configuration Pin 11 Address Line A9 -
Pin Configuration Pin 12 Address Line A10 -
Pin Configuration Pin 13 Address Line A11 -
Pin Configuration Pin 14 Address Line A12 -
Pin Configuration Pin 15 Address Line A13 -
Pin Configuration Pin 16 Ground (GND) -
Pin Configuration Pin 17 Data Line D0 -
Pin Configuration Pin 18 Data Line D1 -
Pin Configuration Pin 19 Data Line D2 -
Pin Configuration Pin 20 Data Line D3 -
Pin Configuration Pin 21 Data Line D4 -
Pin Configuration Pin 22 Data Line D5 -
Pin Configuration Pin 23 Data Line D6 -
Pin Configuration Pin 24 Data Line D7 -
Pin Configuration Pin 25 Chip Select (CS) -
Pin Configuration Pin 26 Programming Voltage (Vpp) -
Pin Configuration Pin 27 Write Enable (WE) -
Pin Configuration Pin 28 Power Supply (Vcc) -

Instructions for Use:

  1. Power Supply:

    • Connect Vcc to a stable 5V power supply.
    • Connect Vpp to 12.5V to 21V during programming and 5V during normal operation.
    • Connect GND to ground.
  2. Addressing:

    • Apply the desired address to the address lines (A0-A13).
  3. Data Read:

    • Set CS low to enable the chip.
    • Set OE low to enable data output.
    • The data will appear on the data lines (D0-D7).
  4. Programming:

    • Set CS low.
    • Set WE low.
    • Apply the desired address to the address lines.
    • Apply the desired data to the data lines.
    • Apply 12.5V to 21V to Vpp.
    • Hold the signals for the typical programming time (10ms).
    • Return Vpp to 5V and release WE and CS.
  5. Erase:

    • Expose the chip to UV light for the typical erase time (10 seconds) to erase all memory contents.
  6. Operating Temperature:

    • Ensure the operating temperature is within the industrial range (-40°C to +85°C).
  7. Handling:

    • Handle the chip with care to avoid static damage.
    • Store in a dry environment to prevent moisture damage.
  8. Testing:

    • After programming, verify the data by reading it back from the chip to ensure correct programming.
  9. Storage:

    • Store the chip in a UV-blocking container to prevent accidental erasure.
(For reference only)

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