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FGA25N120ANTD

Specifications

SKU: 12447294

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Parameter Symbol Min Typ Max Unit Notes
Drain-Source Voltage VDS -120 - - V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current ID - 25 - A @ TC = 25°C, VDS = 12V, VGS = 10V
Pulse Drain Current ID(p) - 75 - A @ TC = 25°C, VDS = 12V, VGS = 10V, tp = 10ms, IGT = 1A
Power Dissipation PTOT - - 240 W @ TC = 25°C
Junction Temperature TJ - - 175 °C
Storage Temperature Range TSTG -55 - 150 °C
Total Gate Charge QG - 138 - nC @ VGS = 15V, ID = 25A
Input Capacitance Ciss - 1260 - pF @ VDS = 100V, f = 1MHz
Output Capacitance Coss - 290 - pF @ VDS = 100V, f = 1MHz
Reverse Transfer Capacitance Crss - 40 - pF @ VDS = 100V, f = 1MHz

Instructions for Use:

  1. Handling Precautions:

    • The FGA25N120ANTD is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling the device.
    • Avoid exposing the device to temperatures outside the specified storage temperature range.
  2. Mounting and Soldering:

    • Ensure that the device is mounted on a suitable heatsink to manage heat dissipation effectively.
    • Follow recommended soldering profiles to avoid thermal shock and damage to the device.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the parameter table.
    • Ensure that the gate-source voltage (VGS) is within the specified range to prevent gate oxide breakdown.
    • Monitor the junction temperature (TJ) to ensure it does not exceed 175°C.
  4. Testing and Troubleshooting:

    • Use a multimeter or oscilloscope to verify the correct operation of the device.
    • If the device fails, check for overvoltage, overcurrent, or overheating conditions.
  5. Storage:

    • Store the device in a dry, cool place away from direct sunlight and corrosive environments.

For detailed application notes and further technical information, refer to the datasheet provided by the manufacturer.

(For reference only)

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