Instructions for Use:

1. Voltage Ratings:

   • Ensure that the drain-source voltage (V_DS) does not exceed 200V to prevent breakdown.
   • The gate-source voltage (V_GS) should be kept within -15V to +20V to avoid damaging the gate oxide.

2. Current Ratings:

   • The continuous drain current (I_D) should not exceed 16A to prevent overheating.
   • For pulse applications, the peak drain current (I_Dpeak) can go up to 75A, but ensure proper heat dissipation.

3. Power Dissipation:

   • The total power dissipation (P_tot) should not exceed 130W. Use appropriate heatsinking to manage thermal conditions.

4. Temperature Limits:

   • The junction temperature (T_J) must not exceed 150°C to maintain reliable operation.
   • Store the device in an environment where the temperature ranges from -55°C to 150°C.

5. Handling Precautions:

   • Handle the device with care to avoid static discharge, which can damage the gate.
   • Use proper mounting techniques to ensure good thermal contact with the heatsink.

6. Application Notes:

   • The IRF640 is suitable for high-frequency switching applications, motor control, and power supplies.
   • Refer to the datasheet for detailed application circuits and recommended operating conditions.