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TMS4464-10NL

Specifications

SKU: 12511177

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Parameter Description Value Unit
Device Type High-Speed CMOS Static RAM TMS4464-10NL -
Organization Memory Organization 256K x 16 bits
Supply Voltage (Vcc) Operating Supply Voltage 5.0 V
Access Time (tAA) Access Time 10 ns
Cycle Time (tCYC) Minimum Cycle Time 15 ns
Output Enable (OE) Output Enable Input Low to Output Valid 8 ns
Write Enable (WE) Write Enable Input Low to Data Latch 8 ns
Address Setup Time (tAS) Address Setup Time before WE/OE Low 3 ns
Address Hold Time (tAH) Address Hold Time after WE/OE Low 2 ns
Data Setup Time (tDS) Data Setup Time before WE Low 3 ns
Data Hold Time (tDH) Data Hold Time after WE Low 1 ns
Power Consumption (ICC) Active Current 120 mA
Standby Current (ISB) Standby Current 10 μA
Operating Temperature Operating Temperature Range 0 to 70 °C
Storage Temperature Storage Temperature Range -65 to 150 °C
Package Package Type 44-Pin PLCC -

Instructions for Use

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is set to 5.0V.
    • Connect the ground (GND) pin to a stable ground reference.
  2. Addressing:

    • Apply the address signals to the address pins (A0-A17) before the falling edge of the Write Enable (WE) or Output Enable (OE) signal.
    • Maintain the address signals stable during the access time (tAA).
  3. Data Input:

    • For write operations, apply the data to the data input pins (D0-D15) before the falling edge of the Write Enable (WE) signal.
    • Ensure the data is held stable for at least the data hold time (tDH) after the falling edge of WE.
  4. Data Output:

    • For read operations, the output enable (OE) signal should be pulled low to enable data output.
    • The data will be valid on the data output pins (D0-D15) after the output enable delay (tOE).
  5. Control Signals:

    • The Write Enable (WE) and Output Enable (OE) signals control the read and write operations.
    • Ensure that the control signals are properly synchronized with the clock or timing requirements of your system.
  6. Power Management:

    • To reduce power consumption, use the standby mode by keeping the WE and OE signals high when not in use.
    • Monitor the standby current (ISB) to ensure it remains within the specified range.
  7. Temperature Considerations:

    • Operate the device within the specified operating temperature range (0 to 70°C) to ensure reliable performance.
    • Store the device within the storage temperature range (-65 to 150°C) to prevent damage.
  8. Handling:

    • Handle the device with care to avoid static discharge, which can damage the internal circuits.
    • Follow proper ESD (Electrostatic Discharge) precautions during handling and installation.
(For reference only)

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