Share:
Specifications
SKU: 12532654
| Parameter | Description | Value |
|---|---|---|
| Part Number | Component Identifier | COM20020I-DZD |
| Type | Component Type | MOSFET (N-Channel) |
| Package | Package Type | TO-220 |
| VDS (Max) | Drain-to-Source Voltage | 200 V |
| VGS (Max) | Gate-to-Source Voltage | ±20 V |
| ID (Continuous) | Continuous Drain Current | 20 A |
| RDS(on) | On-State Resistance at VGS = 10 V | 5.5 mΩ |
| Ptot (Max) | Total Power Dissipation | 150 W |
| fSW (Max) | Switching Frequency | 500 kHz |
| QG | Gate Charge | 135 nC |
| Tj (Max) | Junction Temperature | 175 °C |
| Tstg | Storage Temperature Range | -55 °C to +150 °C |
Instructions:
- Mounting: Ensure proper heat sinking to maintain the junction temperature within the specified range.
- Biasing: Apply gate-to-source voltage (VGS) within the ±20 V range to avoid damage.
- Current Handling: Do not exceed the continuous drain current (ID) of 20 A to prevent overheating.
- Power Dissipation: Ensure that the total power dissipation (Ptot) does not exceed 150 W to avoid thermal runaway.
- Storage: Store the component in a dry environment within the temperature range of -55 °C to +150 °C.
- Handling: Use appropriate ESD protection when handling the component to prevent damage from static electricity.
- Switching: Operate the MOSFET at switching frequencies up to 500 kHz for optimal performance.
- Testing: Verify the on-state resistance (RDS(on)) at VGS = 10 V to ensure the device is functioning correctly.
Inquiry - COM20020I-DZD
