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BTS412B2

Specifications

SKU: 12534304

BUY BTS412B2 https://www.utsource.net/itm/p/12534304.html

Parameter Symbol Min Typical Max Unit Conditions
Continuous Drain Current IDcont - 40 - A Ta = 25°C, VGS = 10V
Peak Pulse Current Ipp - 130 - A tp = 10ms, Ta = 25°C, VGS = 10V
Gate-Source Voltage VGS -18 - 18 V
Drain-Source Voltage VDS - 45 - V
RDS(on) RDS(on) - 5.0 - VGS = 10V, ID = 20A
Gate Charge QG - 190 - nC VGS = 10V, ID = 20A
Thermal Resistance RθJC - 0.6 - K/W Junction to Case
Operating Temperature Toper -40 - 175 °C

Instructions for Use:

  1. Power Supply:

    • Ensure the power supply voltage does not exceed the maximum drain-source voltage (VDS) of 45V.
    • The gate-source voltage (VGS) should be within the range of -18V to +18V.
  2. Current Handling:

    • The continuous drain current (IDcont) should not exceed 40A at room temperature (25°C).
    • For peak pulse currents (Ipp), ensure that the duration does not exceed 10ms and the current does not exceed 130A.
  3. Thermal Management:

    • The thermal resistance (RθJC) from the junction to the case is 0.6 K/W. Proper heat sinking is essential to maintain the operating temperature within the specified range (-40°C to 175°C).
  4. Gate Drive:

    • Apply a gate-source voltage (VGS) of 10V to achieve the typical on-state resistance (RDS(on)) of 5.0 mΩ.
    • The gate charge (QG) is 190 nC, which affects the switching speed and drive requirements.
  5. Storage and Handling:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Handle with care to avoid mechanical stress or static discharge, which can damage the device.
  6. Safety Precautions:

    • Always follow proper safety guidelines when working with high currents and voltages.
    • Ensure adequate ventilation if the device is operated at high temperatures or in enclosed spaces.
(For reference only)

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