Specifications
SKU: 12534304
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Continuous Drain Current | IDcont | - | 40 | - | A | Ta = 25°C, VGS = 10V |
Peak Pulse Current | Ipp | - | 130 | - | A | tp = 10ms, Ta = 25°C, VGS = 10V |
Gate-Source Voltage | VGS | -18 | - | 18 | V | |
Drain-Source Voltage | VDS | - | 45 | - | V | |
RDS(on) | RDS(on) | - | 5.0 | - | mΩ | VGS = 10V, ID = 20A |
Gate Charge | QG | - | 190 | - | nC | VGS = 10V, ID = 20A |
Thermal Resistance | RθJC | - | 0.6 | - | K/W | Junction to Case |
Operating Temperature | Toper | -40 | - | 175 | °C |
Instructions for Use:
Power Supply:
- Ensure the power supply voltage does not exceed the maximum drain-source voltage (VDS) of 45V.
- The gate-source voltage (VGS) should be within the range of -18V to +18V.
Current Handling:
- The continuous drain current (IDcont) should not exceed 40A at room temperature (25°C).
- For peak pulse currents (Ipp), ensure that the duration does not exceed 10ms and the current does not exceed 130A.
Thermal Management:
- The thermal resistance (RθJC) from the junction to the case is 0.6 K/W. Proper heat sinking is essential to maintain the operating temperature within the specified range (-40°C to 175°C).
Gate Drive:
- Apply a gate-source voltage (VGS) of 10V to achieve the typical on-state resistance (RDS(on)) of 5.0 mΩ.
- The gate charge (QG) is 190 nC, which affects the switching speed and drive requirements.
Storage and Handling:
- Store the device in a dry, cool environment to prevent moisture damage.
- Handle with care to avoid mechanical stress or static discharge, which can damage the device.
Safety Precautions:
- Always follow proper safety guidelines when working with high currents and voltages.
- Ensure adequate ventilation if the device is operated at high temperatures or in enclosed spaces.
Inquiry - BTS412B2