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MMBT5551-G1

Specifications

SKU: 12534672

BUY MMBT5551-G1 https://www.utsource.net/itm/p/12534672.html

Parameter Value Unit
Type NPN Transistor
Package SOT-23
Collector-Emitter Voltage (VCEO) 60 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 150 mA
Power Dissipation (Ptot) 310 mW
DC Current Gain (hFE) 110 to 800
Transition Frequency (fT) 300 MHz
Operating Temperature Range -65 to 150 °C
Storage Temperature Range -65 to 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Handle the MMBT5551-G1 with care to avoid damage from electrostatic discharge (ESD).
    • Use appropriate ESD protection measures such as grounded wrist straps and anti-static mats.
  2. Soldering:

    • Use a soldering iron with a temperature setting between 260°C and 300°C.
    • Solder each lead for no more than 3 seconds to prevent thermal damage.
    • Allow the device to cool naturally after soldering.
  3. Mounting:

    • Ensure proper orientation of the transistor during mounting to avoid incorrect connections.
    • The leads are typically labeled as follows: E (Emitter), B (Base), C (Collector).
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Ensure adequate heat dissipation if operating near the maximum power dissipation limit.
  5. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Keep away from direct sunlight and sources of heat.
  6. Testing:

    • Use a multimeter or a transistor tester to verify the functionality of the MMBT5551-G1.
    • Check for continuity between the leads to ensure there are no short circuits.
  7. Troubleshooting:

    • If the transistor fails, check for overvoltage, overcurrent, or overheating conditions.
    • Replace the transistor if it is found to be faulty.
  8. Applications:

    • Suitable for general-purpose switching and amplification applications.
    • Commonly used in consumer electronics, automotive, and industrial control systems.
(For reference only)

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