Specifications
SKU: 12534672
Parameter | Value | Unit |
---|---|---|
Type | NPN Transistor | |
Package | SOT-23 | |
Collector-Emitter Voltage (VCEO) | 60 | V |
Emitter-Base Voltage (VEBO) | 6 | V |
Collector Current (IC) | 150 | mA |
Power Dissipation (Ptot) | 310 | mW |
DC Current Gain (hFE) | 110 to 800 | |
Transition Frequency (fT) | 300 | MHz |
Operating Temperature Range | -65 to 150 | °C |
Storage Temperature Range | -65 to 150 | °C |
Instructions for Use:
Handling Precautions:
- Handle the MMBT5551-G1 with care to avoid damage from electrostatic discharge (ESD).
- Use appropriate ESD protection measures such as grounded wrist straps and anti-static mats.
Soldering:
- Use a soldering iron with a temperature setting between 260°C and 300°C.
- Solder each lead for no more than 3 seconds to prevent thermal damage.
- Allow the device to cool naturally after soldering.
Mounting:
- Ensure proper orientation of the transistor during mounting to avoid incorrect connections.
- The leads are typically labeled as follows: E (Emitter), B (Base), C (Collector).
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Ensure adequate heat dissipation if operating near the maximum power dissipation limit.
Storage:
- Store in a dry, cool place to prevent moisture damage.
- Keep away from direct sunlight and sources of heat.
Testing:
- Use a multimeter or a transistor tester to verify the functionality of the MMBT5551-G1.
- Check for continuity between the leads to ensure there are no short circuits.
Troubleshooting:
- If the transistor fails, check for overvoltage, overcurrent, or overheating conditions.
- Replace the transistor if it is found to be faulty.
Applications:
- Suitable for general-purpose switching and amplification applications.
- Commonly used in consumer electronics, automotive, and industrial control systems.
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