Share:


BLF183XR

Specifications

SKU: 12534706

BUY BLF183XR https://www.utsource.net/itm/p/12534706.html

Parameter Symbol Min Typ Max Unit Condition
Collector-Emitter Voltage VCEO - - 600 V IC = 0, Tc ≤ 150°C
Emitter-Collector Voltage VECS - - 600 V IC = 0, Tc ≤ 150°C
Collector-Base Voltage VCBO - - 700 V IE = 0, Tc ≤ 150°C
Base-Emitter Voltage VBE - 1.8 2.5 V IC = 1A, Tc = 25°C
Continuous Collector Current IC - - 18 A Tc ≤ 150°C
Pulse Collector Current IC(pulse) - - 36 A tp = 1ms, ICav = 18A, Tc ≤ 150°C
Power Dissipation PT - - 180 W Tc ≤ 150°C
Storage Temperature Range Tstg -40 - 150 °C -
Operating Junction Temperature TJ -40 - 150 °C -

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Use a thermal compound between the transistor and the heatsink for optimal thermal performance.
  2. Biasing:

    • Set the base current (IB) to ensure the transistor operates in the desired region (cut-off, active, or saturation).
    • For linear applications, use negative feedback to stabilize the operating point.
  3. Protection:

    • Include a reverse-biased diode across the collector and emitter to protect against inductive load flyback.
    • Use a series resistor with the base to limit base current and prevent damage from excessive base-emitter voltage.
  4. Storage and Handling:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with care to avoid mechanical stress on the leads and body.
  5. Testing:

    • Test the device under controlled conditions to ensure it meets the specified parameters.
    • Use appropriate test equipment to avoid damage from static electricity or overvoltage.
  6. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Ensure proper insulation and grounding to prevent electrical hazards.
(For reference only)

 Inquiry - BLF183XR