Specifications
SKU: 12534706
Parameter | Symbol | Min | Typ | Max | Unit | Condition |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 600 | V | IC = 0, Tc ≤ 150°C |
Emitter-Collector Voltage | VECS | - | - | 600 | V | IC = 0, Tc ≤ 150°C |
Collector-Base Voltage | VCBO | - | - | 700 | V | IE = 0, Tc ≤ 150°C |
Base-Emitter Voltage | VBE | - | 1.8 | 2.5 | V | IC = 1A, Tc = 25°C |
Continuous Collector Current | IC | - | - | 18 | A | Tc ≤ 150°C |
Pulse Collector Current | IC(pulse) | - | - | 36 | A | tp = 1ms, ICav = 18A, Tc ≤ 150°C |
Power Dissipation | PT | - | - | 180 | W | Tc ≤ 150°C |
Storage Temperature Range | Tstg | -40 | - | 150 | °C | - |
Operating Junction Temperature | TJ | -40 | - | 150 | °C | - |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use a thermal compound between the transistor and the heatsink for optimal thermal performance.
Biasing:
- Set the base current (IB) to ensure the transistor operates in the desired region (cut-off, active, or saturation).
- For linear applications, use negative feedback to stabilize the operating point.
Protection:
- Include a reverse-biased diode across the collector and emitter to protect against inductive load flyback.
- Use a series resistor with the base to limit base current and prevent damage from excessive base-emitter voltage.
Storage and Handling:
- Store in a dry, cool place away from direct sunlight.
- Handle with care to avoid mechanical stress on the leads and body.
Testing:
- Test the device under controlled conditions to ensure it meets the specified parameters.
- Use appropriate test equipment to avoid damage from static electricity or overvoltage.
Safety:
- Always follow safety guidelines when working with high voltages and currents.
- Ensure proper insulation and grounding to prevent electrical hazards.
Inquiry - BLF183XR