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Specifications
SKU: 12534760
Below is the parameter table and instructions for the FGH60N60SFD (FGH60N60) 60N60 TO-247 N-Channel MOSFET.
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 600 | V | - |
| Gate-Source Voltage | VGS | -15 | - | 20 | V | - |
| Continuous Drain Current | ID | - | 60 | - | A | TC = 25°C |
| Continuous Drain Current | ID | - | 38 | - | A | TC = 100°C |
| Pulse Drain Current | ID(p) | - | 120 | - | A | tp = 10 ms, TC = 25°C |
| Total Power Dissipation | PTOT | - | - | 190 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | - |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
| Gate Charge | QG | - | 110 | - | nC | VGS = 10V, ID = 10A |
| Input Capacitance | Ciss | - | 3800 | - | pF | VDS = 300V, f = 1 MHz |
| Output Capacitance | Coss | - | 240 | - | pF | VDS = 300V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 100 | - | pF | VDS = 300V, f = 1 MHz |
| On-State Resistance | RDS(on) | - | 0.18 | - | Ω | VGS = 10V, ID = 20A, TJ = 25°C |
| Threshold Voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | ID = 250 μA, TA = 25°C |
| Maximum Gate-Source Voltage | VGS(max) | -15 | - | 20 | V | - |
Instructions
Handling and Storage:
- Handle the device with care to avoid damage to the leads and the body.
- Store the device in a dry, cool place away from direct sunlight and corrosive substances.
- Ensure that the storage temperature range is between -55°C and 150°C.
Mounting:
- Use a heat sink to manage the thermal dissipation effectively, especially when operating at high currents or power levels.
- Ensure proper mechanical alignment and secure mounting to prevent mechanical stress on the device.
- Apply thermal compound between the device and the heat sink to enhance thermal conductivity.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly to the circuit.
- Use short and thick wires to minimize parasitic inductance and resistance.
- Ensure that the gate drive voltage is within the specified range (-15V to +20V).
Operation:
- Operate the device within the specified temperature range to avoid thermal runaway and ensure reliable performance.
- Monitor the junction temperature (TJ) to ensure it does not exceed 175°C.
- Use appropriate gate drive circuits to switch the MOSFET efficiently and avoid excessive switching losses.
Testing:
- Test the device under controlled conditions to verify its performance parameters.
- Use a suitable test setup to measure parameters such as on-state resistance, threshold voltage, and gate charge.
By following these instructions, you can ensure the optimal performance and longevity of the FGH60N60SFD MOSFET.
(For reference only)Inquiry - FGH60N60SFD FGH60N60 60N60 TO-247
