Share:
Specifications
SKU: 12535432
Below is the parameter table and instructions for the AO4485 MOSFET:
AO4485 Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 30 | V | |
| Gate-Source Voltage | VGS | -10 | - | 12 | V | |
| Continuous Drain Current | ID | - | 4.0 | 6.5 | A | TC = 25°C |
| Continuous Drain Current | ID | - | 2.7 | 4.0 | A | TC = 70°C |
| Continuous Drain Current | ID | - | 1.5 | 2.7 | A | TC = 100°C |
| Power Dissipation | PD | - | - | 2.0 | W | TA = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | |
| Storage Temperature | TSTG | -55 | - | 150 | °C | |
| Gate Charge | QG | - | 14 | - | nC | VGS = 10V |
| Input Capacitance | Ciss | - | 120 | - | pF | VDS = 10V |
| Output Capacitance | Coss | - | 27 | - | pF | VDS = 10V |
| Reverse Transfer Capacitance | Crss | - | 22 | - | pF | VDS = 10V |
| On-State Resistance | RDS(on) | - | 0.035 | - | Ω | VGS = 10V, ID = 4A |
| Threshold Voltage | VGS(th) | 0.8 | 1.2 | 1.6 | V | ID = 250μA, TA = 25°C |
| Gate-Source Leakage Current | IGS | - | - | 1.0 | μA | VGS = ±10V, TA = 25°C |
| Drain-Source Breakdown Voltage | VBDS | - | - | 30 | V | ID = 250μA, TA = 25°C |
Instructions for Using AO4485
Handling Precautions:
- ESD Sensitivity: The AO4485 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling the device.
- Storage: Store the device in a dry, cool place away from direct sunlight.
Mounting:
- Heatsinking: Ensure adequate heatsinking if operating at high currents or power levels to maintain junction temperature within safe limits.
- Soldering: Use a soldering iron with a temperature not exceeding 300°C and complete soldering within 10 seconds. Avoid excessive heat and mechanical stress on the leads.
Biasing:
- Gate Voltage: Apply the gate voltage (VGS) carefully to avoid exceeding the maximum ratings. A typical operating range is between 4.5V and 10V for optimal performance.
- Gate Resistor: Use a gate resistor (typically 10Ω to 100Ω) to limit the inrush current and prevent oscillations.
Operation:
- On-State Operation: When the device is turned on, ensure that the drain-source voltage (VDS) does not exceed the rated maximum of 30V.
- Off-State Operation: When the device is off, ensure that the drain-source voltage is maintained below the breakdown voltage (VBDS).
Testing:
- Continuity Check: Use a multimeter to check for continuity between the drain and source terminals when the gate is grounded. There should be no continuity.
- Threshold Voltage: Measure the threshold voltage (VGS(th)) using a voltmeter while applying a small current (e.g., 250μA) to the drain.
Safety:
- Overcurrent Protection: Implement overcurrent protection to prevent damage due to excessive current.
- Thermal Monitoring: Monitor the temperature of the device to ensure it does not exceed the maximum junction temperature of 150°C.
By following these guidelines, you can ensure reliable and efficient operation of the AO4485 MOSFET.
(For reference only)Inquiry - AO4485
