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2N3055

Specifications

SKU: 12541510

BUY 2N3055 https://www.utsource.net/itm/p/12541510.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCEO - - 60 V
Collector-Base Voltage VCBO - - 100 V
Emitter-Base Voltage VEBO - - 7 V
Continuous Collector Current IC - - 15 A
Peak Collector Current IC(peak) - - 30 A
Power Dissipation PT - - 115 W
Junction Temperature TJ -20 - 150 °C
Storage Temperature TSTG -65 - 150 °C
Thermal Resistance (J-C) RθJC - - 1.55 °C/W
Transition Frequency fT - 2.5 - MHz

Instructions for Use:

  1. Heat Sinking:

    • The 2N3055 is designed to handle high power dissipation, but it requires an adequate heat sink to prevent overheating. Ensure the junction temperature does not exceed 150°C.
    • Use thermal compound between the transistor and the heat sink to improve thermal conductivity.
  2. Biasing:

    • Proper biasing is crucial to avoid thermal runaway. Use a stable base current to maintain the collector current within safe limits.
    • For linear applications, ensure the transistor operates in the active region to avoid saturation or cutoff.
  3. Voltage Ratings:

    • Do not exceed the maximum ratings for collector-emitter voltage (VCEO), collector-base voltage (VCBO), and emitter-base voltage (VEBO).
    • Exceeding these ratings can cause immediate damage to the transistor.
  4. Current Handling:

    • The continuous collector current (IC) should not exceed 15A. For peak currents up to 30A, ensure the pulse duration is short and the average power dissipation is within limits.
    • Use appropriate fuses or current-limiting resistors to protect the transistor from overcurrent conditions.
  5. Mounting:

    • Mount the 2N3055 securely to the heat sink using the provided mounting hardware. Ensure the transistor is properly aligned and tightened to avoid mechanical stress.
    • Avoid applying excessive torque to the mounting screws to prevent damage to the transistor.
  6. Storage:

    • Store the 2N3055 in a dry, cool environment with temperatures between -65°C and 150°C.
    • Handle the transistor with care to avoid static discharge, which can damage the device.
  7. Testing:

    • Before installing the transistor in a circuit, test its parameters using a multimeter or a dedicated transistor tester to ensure it meets the specified ratings.
    • Check for proper operation by measuring the base-emitter and base-collector voltages under controlled conditions.

By following these guidelines, you can ensure reliable and efficient operation of the 2N3055 transistor in your applications.

(For reference only)

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