Specifications
SKU: 12542706
Parameter | Symbol | Value | Unit |
---|---|---|---|
Rated Voltage | VRMS | 650 | V |
Peak Repetitive Reverse Voltage | VRRM | 910 | V |
Non-Repetitive Peak Reverse Surge Voltage | VRSM | 1200 | V |
Rated RMS Current | IF | 60 | A |
Peak Surge Current (8.3/20 μs) | ISM | 1200 | A |
Junction Temperature Range | TJ | -55 to +175 | °C |
Storage Temperature Range | TSTG | -55 to +150 | °C |
Forward Voltage at Rated Current | VF | 1.1 | V |
Reverse Leakage Current at 25°C | IR | 50 | μA |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use appropriate mounting hardware to secure the device.
Electrical Connections:
- Connect the anode and cathode terminals correctly to avoid reverse biasing the diode.
- Ensure all connections are tight and secure to prevent electrical issues.
Thermal Management:
- Monitor the junction temperature to ensure it does not exceed the maximum allowable temperature.
- Use thermal paste or thermal interface materials between the device and the heatsink for better heat dissipation.
Surge Handling:
- The device is designed to handle surge currents up to 1200 A (8.3/20 μs). Ensure that any surge conditions do not exceed these limits to avoid damage.
Storage:
- Store the device in a dry, cool environment within the specified storage temperature range to prevent degradation.
Handling:
- Handle the device with care to avoid mechanical damage.
- Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
Testing:
- Perform regular testing to ensure the device is functioning within its rated parameters.
- Use appropriate test equipment and methods to avoid damaging the device during testing.
Compliance:
- Ensure that the application complies with all relevant safety and regulatory standards.
For more detailed information, refer to the datasheet provided by the manufacturer.
(For reference only)Inquiry - RGTH60TS65