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IRFP450

Specifications

SKU: 12543079

BUY IRFP450 https://www.utsource.net/itm/p/12543079.html

Parameter Symbol Min Typical Max Unit Conditions
Drain-to-Source Voltage VDS - - 500 V
Gate-to-Source Voltage VGS -15 - 20 V
Continuous Drain Current ID - 8 - A TC = 25°C
Pulse Drain Current ID(p) - 16 - A tp = 10 ms, TC = 25°C
Total Power Dissipation PT - - 110 W TC = 25°C
Junction Temperature TJ - - 150 °C
Storage Temperature Range Tstg -55 - 150 °C
Thermal Resistance (J-C) RθJC - 0.75 - °C/W
Input Capacitance Ciss - 1500 - pF VDS = 0 V, f = 1 MHz
Output Capacitance Coss - 400 - pF VDS = 250 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 300 - pF VDS = 250 V, f = 1 MHz
On-State Resistance RDS(on) - 0.95 - Ω VGS = 10 V, ID = 8 A
Gate Charge QG - 50 - nC VDS = 400 V, VGS = 15 V

Instructions for Use:

  1. Mounting and Heat Sinking:

    • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
    • Use a thermal compound to improve thermal conductivity between the device and the heat sink.
  2. Biasing:

    • Apply a gate-to-source voltage (VGS) within the specified range to turn the device on or off.
    • For reliable operation, ensure VGS is at least 10 V to fully enhance the device.
  3. Current Handling:

    • Do not exceed the continuous drain current (ID) rating.
    • For pulse applications, ensure the pulse duration (tp) does not exceed 10 ms to avoid overheating.
  4. Voltage Ratings:

    • Do not exceed the maximum drain-to-source voltage (VDS) or gate-to-source voltage (VGS).
    • Ensure the device is properly protected against overvoltage conditions.
  5. Thermal Management:

    • Monitor the junction temperature (TJ) to prevent thermal runaway.
    • Use appropriate cooling methods such as forced air cooling or liquid cooling if necessary.
  6. Storage:

    • Store the device in a dry, cool environment within the storage temperature range (Tstg).
  7. Handling:

    • Handle the device with care to avoid mechanical damage.
    • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).
(For reference only)

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