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Specifications
SKU: 12562509
Below is the parameter table and instructions for the FSL128MRT, a 128 Mbit (16 MByte) Serial NOR Flash Memory with Quad SPI Interface.
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Supply Voltage | VCC | 2.7 | - | 3.6 | V | Operating |
| Standby Current | IDD0 | 1 | 5 | 10 | μA | VCC = 3.0V, Standby Mode |
| Active Current | IDD1 | 4 | 8 | 12 | mA | VCC = 3.0V, Read at 104 MHz |
| Write Enable/Disable Time | tWEL | 0 | 0.1 | 1 | μs | VCC = 3.0V |
| Page Program Time | tPP | 0 | 2.5 | 5 | ms | VCC = 3.0V, 256 bytes |
| Sector Erase Time | tSE | 0 | 250 | 500 | ms | VCC = 3.0V, 4 Kbytes |
| Block Erase Time | tBE | 0 | 2500 | 5000 | ms | VCC = 3.0V, 64 Kbytes |
| Chip Erase Time | tCE | 0 | 30000 | 60000 | ms | VCC = 3.0V, Full Chip |
| Data Retention | - | 100 | - | - | years | VCC = 3.0V, 25°C |
| Operating Temperature Range | - | -40 | - | 85 | °C | Industrial |
| Storage Temperature Range | - | -65 | - | 150 | °C |
Instructions
Power Supply:
- Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V.
- The device should be powered from a stable and regulated power source.
Initialization:
- After applying power, wait for the device to initialize. This typically takes less than 1 μs.
- Set the device into active mode by sending the appropriate command sequence.
Read Operations:
- Use the Read Data (03h) command to read data from the memory.
- For faster read operations, use the Fast Read (0Bh) or Dual Output Fast Read (3Bh) commands.
Write Operations:
- Before performing any write operation, ensure the Write Enable Latch (WEL) is set by sending the Write Enable (06h) command.
- Use the Page Program (02h) command to write up to 256 bytes of data to a single page.
- After writing, send the Write Disable (04h) command to clear the WEL.
Erase Operations:
- Use the Sector Erase (20h) command to erase a 4 Kbyte sector.
- Use the Block Erase (52h) command to erase a 64 Kbyte block.
- Use the Chip Erase (60h) command to erase the entire chip.
- Wait for the specified erase time before initiating new operations.
Status Register:
- Read the status register using the Read Status Register (05h) command to check the status of write and erase operations.
- The Write In Progress (WIP) bit (bit 0) indicates whether a write or erase operation is in progress.
Quad SPI Operations:
- For quad SPI operations, use the Quad I/O Read (EBh) command for fast data transfer.
- Ensure the device is configured for quad SPI mode using the appropriate configuration commands.
Temperature Considerations:
- The device operates reliably within the temperature range of -40°C to 85°C.
- Store the device within the temperature range of -65°C to 150°C.
Data Retention:
- The device retains data for up to 100 years under normal operating conditions (VCC = 3.0V, 25°C).
Handling and Storage:
- Handle the device with care to avoid electrostatic discharge (ESD).
- Store the device in a dry and cool environment to prevent damage.
By following these instructions, you can effectively use the FSL128MRT serial NOR flash memory in your applications.
(For reference only)Inquiry - FSL128MRT
