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Specifications
SKU: 12591458
Below is the parameter table and instructions for the AOD5B65MQ1E MOSFET:
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 650 | - | V | - |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Continuous Drain Current | ID | - | - | 33 | A | TC = 25°C |
| Continuous Drain Current (Pulsed) | ID(pulsed) | - | - | 48 | A | TC = 25°C, tp = 10 μs |
| Power Dissipation | PD | - | - | 175 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | - |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
| Input Capacitance | Ciss | - | 2300 | - | pF | VDS = 300 V, f = 1 MHz |
| Output Capacitance | Coss | - | 190 | - | pF | VDS = 300 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 350 | - | pF | VDS = 300 V, f = 1 MHz |
| Gate Charge | QG | - | 110 | - | nC | VDS = 300 V, VGS = 10 V |
| Threshold Voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | ID = 250 μA |
| On-State Resistance | RDS(on) | - | 0.075 | - | Ω | VGS = 10 V, ID = 33 A |
| Total Gate Charge | QG | - | 110 | - | nC | VDS = 300 V, VGS = 10 V |
Instructions
Handling and Storage:
- Store the device in a dry, cool place to avoid moisture damage.
- Handle the device with care to avoid mechanical stress or damage to the leads.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure that the mounting surface is clean and free from contaminants.
- Use a thermal interface material (TIM) between the device and the heat sink to improve thermal performance.
- Tighten the mounting screws to the recommended torque to ensure good thermal contact without causing mechanical stress.
Biasing and Operation:
- Apply the gate-source voltage (VGS) within the specified range to avoid damage.
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.
- Monitor the junction temperature (TJ) to prevent overheating and ensure reliable operation.
Testing:
- Use appropriate test equipment and methods to measure the parameters.
- Follow the test conditions specified in the parameter table for accurate results.
Application Notes:
- The device is suitable for high-voltage, high-current applications such as power supplies, motor control, and lighting.
- Consider the on-state resistance (RDS(on)) and switching losses when designing the circuit.
- Use external components like gate resistors and snubber circuits to optimize performance and protect the device.
For more detailed information, refer to the datasheet provided by the manufacturer.
(For reference only)Inquiry - AOD5B65MQ1E
