Specifications
SKU: 12594104
Parameter | Symbol | Min | Typ | Max | Unit | Condition |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 40 | V | |
Emitter-Base Voltage | VEB | -5 | - | 5 | V | |
Collector Current | IC | - | - | 150 | mA | |
Base Current | IB | - | - | 15 | mA | |
Power Dissipation | PT | - | - | 625 | mW | TA = 25°C |
Storage Temperature | TSTG | -55 | - | 150 | °C | |
Operating Temperature | TA | -55 | - | 150 | °C | |
DC Current Gain | hFE | 50 | 100 | 300 | - | IC = 10mA, VCE = 10V |
Transition Frequency | fT | - | 300 | - | MHz | IC = 10mA, VCE = 10V |
Instructions for Use:
Handling Precautions:
- Handle the 2SC3116S with care to avoid static damage.
- Use appropriate ESD (Electrostatic Discharge) protection measures.
Mounting:
- Ensure proper heat dissipation if operating near the maximum power dissipation limit.
- Use a heatsink if necessary, especially in high-power applications.
Biasing:
- Ensure that the base current is within the specified limits to avoid damaging the transistor.
- Use a base resistor to control the base current when driving the transistor from a digital or analog source.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Operate within the specified temperature range to ensure reliable performance.
Testing:
- When testing the transistor, use a suitable test circuit to avoid over-stressing the device.
- Measure the parameters under the conditions specified in the table for accurate results.
Storage:
- Store the 2SC3116S in a dry, cool place away from direct sunlight and sources of heat.
- Keep the devices in their original packaging until ready for use to protect them from static and physical damage.
Inquiry - 2SC3116S