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2SC3116S

Specifications

SKU: 12594104

BUY 2SC3116S https://www.utsource.net/itm/p/12594104.html

Parameter Symbol Min Typ Max Unit Condition
Collector-Emitter Voltage VCE - - 40 V
Emitter-Base Voltage VEB -5 - 5 V
Collector Current IC - - 150 mA
Base Current IB - - 15 mA
Power Dissipation PT - - 625 mW TA = 25°C
Storage Temperature TSTG -55 - 150 °C
Operating Temperature TA -55 - 150 °C
DC Current Gain hFE 50 100 300 - IC = 10mA, VCE = 10V
Transition Frequency fT - 300 - MHz IC = 10mA, VCE = 10V

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2SC3116S with care to avoid static damage.
    • Use appropriate ESD (Electrostatic Discharge) protection measures.
  2. Mounting:

    • Ensure proper heat dissipation if operating near the maximum power dissipation limit.
    • Use a heatsink if necessary, especially in high-power applications.
  3. Biasing:

    • Ensure that the base current is within the specified limits to avoid damaging the transistor.
    • Use a base resistor to control the base current when driving the transistor from a digital or analog source.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within the specified temperature range to ensure reliable performance.
  5. Testing:

    • When testing the transistor, use a suitable test circuit to avoid over-stressing the device.
    • Measure the parameters under the conditions specified in the table for accurate results.
  6. Storage:

    • Store the 2SC3116S in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the devices in their original packaging until ready for use to protect them from static and physical damage.
(For reference only)

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