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2SD2655

Specifications

SKU: 12594989

BUY 2SD2655 https://www.utsource.net/itm/p/12594989.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCE - - 100 V
Emitter-Base Voltage VEB - - 5 V
Collector Current IC - 3 5 A
Base Current IB - - 0.5 A
Power Dissipation PT - - 62.5 W
Storage Temperature Range TSTG -55 - 150 °C
Operating Temperature TA -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings listed in the table to prevent damage.
    • Use appropriate heat sinks to manage power dissipation, especially when operating near the maximum power rating.
  2. Mounting:

    • Ensure proper alignment of the transistor leads during soldering.
    • Use a torque wrench to apply the recommended torque when mounting the transistor to a heat sink.
  3. Electrical Connections:

    • Connect the collector (C) to the positive supply or load.
    • Connect the emitter (E) to ground or the negative side of the load.
    • Connect the base (B) to the control circuit, ensuring the base current is within the specified limits.
  4. Thermal Management:

    • For high-power applications, ensure adequate cooling to keep the junction temperature within safe limits.
    • Use thermal paste between the transistor and the heat sink to improve thermal conductivity.
  5. Testing:

    • Before final assembly, test the transistor with a multimeter to ensure it is functioning correctly.
    • Perform a simple continuity test between the base and emitter to check for short circuits.
  6. Storage:

    • Store the transistors in a dry, cool place away from direct sunlight.
    • Handle with care to avoid mechanical damage.
(For reference only)

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