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2SC2059K

Specifications

SKU: 12597197

BUY 2SC2059K https://www.utsource.net/itm/p/12597197.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 600 V
Collector-Base Voltage VCBO - - 700 V
Emitter-Base Voltage VEBO - - 7 V
Collector Current IC - - 15 A
Base Current IB - - 3 A
Power Dissipation PT - - 180 W
Junction Temperature TJ -20 - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Handling:

    • Handle the 2SC2059K with care to avoid mechanical damage.
    • Use proper ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
  2. Mounting:

    • Ensure proper heat sinking to manage the high power dissipation capability.
    • Use thermal paste between the transistor and the heat sink for better thermal conductivity.
  3. Biasing:

    • Ensure that the base current (IB) is sufficient to fully turn on the transistor, but do not exceed the maximum base current rating.
    • Use a suitable base resistor to limit the base current.
  4. Operating Conditions:

    • Do not exceed the maximum ratings for collector-emitter voltage (VCEO), collector-base voltage (VCBO), and emitter-base voltage (VEBO).
    • Keep the junction temperature (TJ) within the specified range to ensure reliable operation.
  5. Storage:

    • Store the 2SC2059K in a dry, cool place to prevent moisture damage.
    • Avoid exposing the device to extreme temperatures outside the storage temperature range.
  6. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the 2SC2059K before installation.
    • Perform initial testing at low power levels to ensure proper operation.
  7. Soldering:

    • Use a soldering iron with a temperature setting appropriate for semiconductor devices.
    • Avoid overheating the leads during soldering to prevent damage to the internal structure of the transistor.
(For reference only)

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