Specifications
SKU: 12603955
Parameter | Description | Value |
---|---|---|
Part Number | MB2013A-1 | |
Type | Bipolar Junction Transistor (BJT) | |
Polarity | NPN | |
Collector-Emitter Voltage (Vce) | Maximum voltage between collector and emitter | 50 V |
Emitter-Base Voltage (Veb) | Maximum voltage between emitter and base | 6 V |
Collector Current (Ic) | Continuous collector current | 500 mA |
Power Dissipation (Ptot) | Total power dissipation | 625 mW |
DC Current Gain (hFE) | Minimum DC current gain at Ic = 50 mA, Vce = 5 V | 100 |
Transition Frequency (ft) | Transition frequency | 300 MHz |
Storage Temperature Range | Operating temperature range for storage | -55°C to 150°C |
Operating Temperature Range | Operating temperature range for use | -40°C to 125°C |
Package Type | SOT-23 | |
Lead Finish | Matte Tin |
Instructions:
Handling and Storage:
- Store in a dry, cool place to prevent moisture damage.
- Handle with care to avoid static discharge, which can damage the component.
Mounting:
- Ensure proper alignment of the leads before soldering.
- Use a heat sink if operating near the maximum power dissipation limit.
- Avoid excessive heat during soldering; use a temperature-controlled soldering iron.
Circuit Design:
- Ensure that the collector-emitter voltage and collector current do not exceed the specified limits.
- Use appropriate base resistors to control the base current and ensure stable operation.
- Consider the thermal resistance of the package when designing the circuit to manage heat dissipation effectively.
Testing:
- Test the transistor in a controlled environment to verify its parameters.
- Use a multimeter or transistor tester to check the continuity and gain of the transistor.
Safety:
- Always disconnect the power supply before making any changes to the circuit.
- Use protective equipment such as gloves and safety glasses when handling the component.
Inquiry - MB2013A-1