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MB2013A-1

Specifications

SKU: 12603955

BUY MB2013A-1 https://www.utsource.net/itm/p/12603955.html

Parameter Description Value
Part Number MB2013A-1
Type Bipolar Junction Transistor (BJT)
Polarity NPN
Collector-Emitter Voltage (Vce) Maximum voltage between collector and emitter 50 V
Emitter-Base Voltage (Veb) Maximum voltage between emitter and base 6 V
Collector Current (Ic) Continuous collector current 500 mA
Power Dissipation (Ptot) Total power dissipation 625 mW
DC Current Gain (hFE) Minimum DC current gain at Ic = 50 mA, Vce = 5 V 100
Transition Frequency (ft) Transition frequency 300 MHz
Storage Temperature Range Operating temperature range for storage -55°C to 150°C
Operating Temperature Range Operating temperature range for use -40°C to 125°C
Package Type SOT-23
Lead Finish Matte Tin

Instructions:

  1. Handling and Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage the component.
  2. Mounting:

    • Ensure proper alignment of the leads before soldering.
    • Use a heat sink if operating near the maximum power dissipation limit.
    • Avoid excessive heat during soldering; use a temperature-controlled soldering iron.
  3. Circuit Design:

    • Ensure that the collector-emitter voltage and collector current do not exceed the specified limits.
    • Use appropriate base resistors to control the base current and ensure stable operation.
    • Consider the thermal resistance of the package when designing the circuit to manage heat dissipation effectively.
  4. Testing:

    • Test the transistor in a controlled environment to verify its parameters.
    • Use a multimeter or transistor tester to check the continuity and gain of the transistor.
  5. Safety:

    • Always disconnect the power supply before making any changes to the circuit.
    • Use protective equipment such as gloves and safety glasses when handling the component.
(For reference only)

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