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BF961

Specifications

SKU: 12605146

BUY BF961 https://www.utsource.net/itm/p/12605146.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - 30 - V
Base-Emitter Voltage VBE - 5 - V
Collector Current IC - 150 - mA
Base Current IB - 10 - mA
Power Dissipation PT - 625 - mW
Transition Frequency fT - 800 - MHz
Storage Temperature TSTG -55 - 150 °C
Operating Temperature TA -40 - 85 °C

Instructions for Using BF961:

  1. Biasing:

    • Ensure that the base-emitter voltage (VBE) is within the specified range to avoid damage.
    • Use appropriate biasing circuits to maintain the collector current (IC) within the rated limits.
  2. Power Dissipation:

    • Keep the power dissipation (PT) below the maximum rating to prevent overheating.
    • Consider using a heat sink if operating near the maximum power dissipation.
  3. Temperature:

    • Operate the transistor within the specified temperature ranges (TA for ambient and TSTG for storage) to ensure reliable performance.
    • Avoid exposing the device to temperatures outside these ranges, as it can lead to permanent damage.
  4. Frequency Considerations:

    • The transition frequency (fT) indicates the maximum frequency at which the transistor can operate effectively. Design circuits accordingly to ensure stability and performance.
  5. Handling:

    • Handle the transistor with care to avoid static discharge, which can damage the device.
    • Use proper ESD protection measures during handling and installation.
  6. Mounting:

    • Ensure proper mounting techniques to avoid mechanical stress on the leads.
    • Follow recommended soldering profiles to prevent thermal shock.
  7. Testing:

    • Test the transistor under controlled conditions to verify its parameters and performance.
    • Use appropriate test equipment and methods to avoid damaging the device.
(For reference only)

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