Specifications
SKU: 12605146
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | 30 | - | V |
Base-Emitter Voltage | VBE | - | 5 | - | V |
Collector Current | IC | - | 150 | - | mA |
Base Current | IB | - | 10 | - | mA |
Power Dissipation | PT | - | 625 | - | mW |
Transition Frequency | fT | - | 800 | - | MHz |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Operating Temperature | TA | -40 | - | 85 | °C |
Instructions for Using BF961:
Biasing:
- Ensure that the base-emitter voltage (VBE) is within the specified range to avoid damage.
- Use appropriate biasing circuits to maintain the collector current (IC) within the rated limits.
Power Dissipation:
- Keep the power dissipation (PT) below the maximum rating to prevent overheating.
- Consider using a heat sink if operating near the maximum power dissipation.
Temperature:
- Operate the transistor within the specified temperature ranges (TA for ambient and TSTG for storage) to ensure reliable performance.
- Avoid exposing the device to temperatures outside these ranges, as it can lead to permanent damage.
Frequency Considerations:
- The transition frequency (fT) indicates the maximum frequency at which the transistor can operate effectively. Design circuits accordingly to ensure stability and performance.
Handling:
- Handle the transistor with care to avoid static discharge, which can damage the device.
- Use proper ESD protection measures during handling and installation.
Mounting:
- Ensure proper mounting techniques to avoid mechanical stress on the leads.
- Follow recommended soldering profiles to prevent thermal shock.
Testing:
- Test the transistor under controlled conditions to verify its parameters and performance.
- Use appropriate test equipment and methods to avoid damaging the device.
Inquiry - BF961