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Specifications
SKU: 12605232
| Parameter | Description | Value |
|---|---|---|
| Part Number | Component Identifier | IRAM535-1065AS |
| Type | Component Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
| Package | Encapsulation Type | TO-220 |
| VDS (Max) | Drain-to-Source Voltage | 535 V |
| VGS (Max) | Gate-to-Source Voltage | ±20 V |
| ID (Max) | Continuous Drain Current | 10 A |
| RDS(on) (Max) | On-State Resistance at VGS = 10 V | 0.65 Ω |
| Power Dissipation (Max) | Maximum Power Dissipation | 106 W |
| Operating Temperature Range | Junction Temperature | -55°C to +150°C |
| Storage Temperature Range | Storage Temperature | -65°C to +150°C |
| Thermal Resistance (Junction to Case) | RθJC | 1.5 K/W |
| Thermal Resistance (Junction to Ambient) | RθJA | 62 K/W |
| Gate Charge | Qg | 140 nC |
| Input Capacitance | Ciss | 2000 pF |
| Output Capacitance | Coss | 300 pF |
| Reverse Transfer Capacitance | Crss | 250 pF |
Instructions for Use:
Handling Precautions:
- ESD Protection: The device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
- Mounting: Ensure that the device is mounted on a heatsink if operating near maximum power dissipation to prevent overheating.
Circuit Design:
- Gate Drive: Apply a gate voltage (VGS) within the specified range to control the MOSFET. Ensure that the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.
- Heat Management: If the device is expected to dissipate significant power, ensure adequate heat sinking to maintain the junction temperature within safe limits.
Storage:
- Temperature: Store the device in a dry environment within the specified storage temperature range.
- Humidity: Avoid exposure to high humidity levels to prevent corrosion or damage.
Testing:
- Initial Testing: Before integrating the MOSFET into a circuit, perform initial testing to verify its parameters and functionality.
- Parameter Verification: Measure key parameters such as VDS, ID, and RDS(on) to ensure they meet the specifications.
Safety:
- Overvoltage Protection: Implement overvoltage protection circuits to prevent damage from voltage spikes.
- Overcurrent Protection: Use current limiting techniques to protect the MOSFET from excessive current.
For detailed application notes and further technical information, refer to the datasheet provided by the manufacturer.
(For reference only)Inquiry - IRAM535-1065AS
