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SST39SF040-70-4C-PH

Specifications

SKU: 12606053

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Parameter Symbol Min Typical Max Unit Notes
Supply Voltage Vcc 2.7 3.6 V
Standby Current Istby 10 μA Vcc = 3.0V, Ta = 25°C
Active Current (Read) Iread 10 20 mA Vcc = 3.0V, Ta = 25°C, 5VCC/50MHz
Write Enable Pin Input Low IWE -1 -20 μA Vcc = 3.0V, Ta = 25°C
Output High Level VOH 2.4 Vcc V Vcc = 3.0V, Io = -1mA, Ta = 25°C
Output Low Level VOL 0 0.4 V Vcc = 3.0V, Io = 1mA, Ta = 25°C
Access Time tACC 70 ns Vcc = 3.0V, Ta = 25°C, 5VCC/50MHz
Write Cycle Time tWC 5 10 ms Vcc = 3.0V, Ta = 25°C, Typical: 8ms
Block Erase Time tBERS 300 500 ms Vcc = 3.0V, Ta = 25°C, Typical: 400ms
Chip Erase Time tCHERS 2 8 s Vcc = 3.0V, Ta = 25°C, Typical: 4s
Data Retention >10 years Vcc = 3.0V, Ta = 25°C
Operating Temperature Ta -40 85 °C
Storage Temperature Tstg -65 150 °C

Instructions for Use:

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the range of 2.7V to 3.6V.
    • The device has a low standby current of 10μA at 3.0V.
  2. Current Consumption:

    • During active read operations, the current consumption can be up to 20mA.
    • The write enable pin (WE) should have a low input current of -1μA to -20μA.
  3. Output Levels:

    • The output high level (VOH) should be at least 2.4V when the output current is -1mA.
    • The output low level (VOL) should not exceed 0.4V when the output current is 1mA.
  4. Timing Parameters:

    • The access time (tACC) is 70ns under typical conditions.
    • The write cycle time (tWC) is typically 8ms but can range from 5ms to 10ms.
    • The block erase time (tBERS) is typically 400ms but can range from 300ms to 500ms.
    • The chip erase time (tCHERS) is typically 4 seconds but can range from 2 seconds to 8 seconds.
  5. Data Retention:

    • The device guarantees data retention for more than 10 years at 25°C and 3.0V.
  6. Temperature Ranges:

    • The operating temperature (Ta) ranges from -40°C to 85°C.
    • The storage temperature (Tstg) ranges from -65°C to 150°C.
  7. Handling and Storage:

    • Store the device in a dry environment to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage the device.
  8. Programming and Erasing:

    • Follow the specific programming and erasing sequences provided in the device datasheet to ensure reliable operation.
    • Use appropriate programming voltages and timings to avoid data corruption or device failure.
  9. Testing:

    • Perform functional tests at the specified operating conditions to verify correct operation.
    • Use recommended test procedures and equipment to ensure accurate results.
  10. Compliance:

    • Ensure that the device complies with all relevant safety and regulatory standards for your application.
(For reference only)

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