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AM29F800BB-70SE

Specifications

SKU: 12606106

BUY AM29F800BB-70SE https://www.utsource.net/itm/p/12606106.html

Parameter Description Value Unit
Device Type Flash Memory 1 M x 8 -
Technology CMOS - -
Package Plastic Quad Flat Pack (PQFP) 48-pin -
Operating Voltage (Vcc) Supply Voltage 3.3V V
Standby Current (Vcc = 3.3V) Power Consumption in Standby Mode 10 μA
Active Current (Vcc = 3.3V, 55 MHz) Power Consumption in Active Mode 150 mA
Access Time (tACC) Time from Address Valid to Data Valid 70 ns
Page Size Number of Bytes in a Page 256 bytes
Block Size Number of Bytes in a Block 64K bytes
Sector Size Number of Bytes in a Sector 8K bytes
Programming Time (tPROG) Time to Program a Byte 300 μs
Erase Time (tERS) Time to Erase a Block 2000 ms
Endurance Number of Write/Erase Cycles per Block 100,000 cycles
Data Retention Minimum Guaranteed Data Retention Time 10 years
Operating Temperature Range Temperature Range for Normal Operation -40 to +85 °C
Storage Temperature Range Temperature Range for Storage -65 to +150 °C

Instructions:

  1. Power Supply:

    • Connect the Vcc pin to a 3.3V supply.
    • Connect the Vss pin to ground.
  2. Addressing:

    • Provide the address to the A0-A19 pins to select the desired memory location.
  3. Data I/O:

    • Data is read from or written to the D0-D7 pins.
  4. Control Signals:

    • Chip Select (CS#): Low to enable the device.
    • Output Enable (OE#): Low to enable data output.
    • Write Enable (WE#): Low to initiate a write operation.
    • Write Protect (WP#): High to allow writes, low to prevent writes.
    • Reset (RESET#): Low to reset the device.
  5. Programming:

    • To program a byte, set the address and data, then assert WE# and CS# low.
    • The programming time is 300 μs.
  6. Erasing:

    • To erase a block, set the block address, then assert the appropriate control signals.
    • The erase time is 2000 ms.
  7. Read Operation:

    • Set the address, assert CS# and OE# low, and read the data from the D0-D7 pins.
  8. Standby Mode:

    • To enter standby mode, deassert CS# (set high).
  9. Temperature Considerations:

    • Ensure the operating temperature is within -40°C to +85°C for reliable performance.
    • Store the device within -65°C to +150°C.
  10. Endurance and Data Retention:

    • The device can withstand up to 100,000 write/erase cycles per block.
    • Data retention is guaranteed for at least 10 years under normal operating conditions.
(For reference only)

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