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2SA968-O

Specifications

SKU: 12606714

BUY 2SA968-O https://www.utsource.net/itm/p/12606714.html

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 300 V
Collector-Base Voltage VCBO 350 V
Emitter-Base Voltage VEBO 7 V
Collector Current IC 10 A
Base Current IB 1.5 A
Power Dissipation PT 125 W
Junction Temperature TJ -55 to 150 °C
Storage Temperature TSTG -65 to 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the transistor is handled with care to avoid mechanical damage.
    • Use appropriate heat sinks to manage the power dissipation, especially when operating at high currents.
  2. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) terminals correctly.
    • Ensure that the maximum ratings for voltage and current are not exceeded.
  3. Thermal Management:

    • The junction temperature should be kept within the specified range to ensure reliable operation.
    • Use thermal paste between the transistor and the heat sink to improve thermal conductivity.
  4. Storage:

    • Store the transistor in a dry, cool place within the specified storage temperature range.
    • Avoid exposure to high humidity and corrosive environments.
  5. Testing:

    • Before installing the transistor, test it using a multimeter or a transistor tester to ensure it is functioning correctly.
    • Check for any short circuits or open circuits in the connections.
  6. Safety:

    • Always use appropriate safety equipment when handling high-voltage and high-current circuits.
    • Follow all relevant safety guidelines and regulations to prevent injury or damage.
  7. Application Notes:

    • The 2SA968-O is suitable for applications such as power amplifiers, switching circuits, and other high-power transistor applications.
    • Refer to the datasheet for detailed application notes and circuit diagrams.
(For reference only)

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