Specifications
SKU: 12607012
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | Vce | - | - | 600 | V |
Collector Current | Ic | - | - | 30 | A |
Power Dissipation | Ptot | - | - | 280 | W |
Junction Temperature | Tj | -20 | - | 150 | °C |
Storage Temperature | Tstg | -55 | - | 150 | °C |
Gate Charge | Qg | - | 140 | - | nC |
Turn-On Time | ton | - | 90 | - | ns |
Turn-Off Time | toff | - | 70 | - | ns |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to manage the power dissipation.
- Use a flat surface for mounting to ensure good thermal contact.
Biasing:
- Apply a gate-emitter voltage (Vge) of at least 15V to fully turn on the transistor.
- Keep Vge within the safe operating range to avoid damage.
Operating Conditions:
- Do not exceed the maximum collector current (Ic) or collector-emitter voltage (Vce).
- Monitor the junction temperature (Tj) to prevent overheating.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Avoid exposure to extreme temperatures outside the storage temperature range.
Handling:
- Handle with care to avoid mechanical stress.
- Use appropriate ESD protection to prevent damage from static electricity.
Testing:
- Use a suitable test setup to verify the parameters before integrating into a circuit.
- Test under controlled conditions to ensure reliable operation.
Safety:
- Always follow safety guidelines when working with high voltages and currents.
- Use protective equipment as necessary.
Inquiry - IXXH30N60B3D1