Share:


IXXH30N60B3D1

Specifications

SKU: 12607012

BUY IXXH30N60B3D1 https://www.utsource.net/itm/p/12607012.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage Vce - - 600 V
Collector Current Ic - - 30 A
Power Dissipation Ptot - - 280 W
Junction Temperature Tj -20 - 150 °C
Storage Temperature Tstg -55 - 150 °C
Gate Charge Qg - 140 - nC
Turn-On Time ton - 90 - ns
Turn-Off Time toff - 70 - ns

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage the power dissipation.
    • Use a flat surface for mounting to ensure good thermal contact.
  2. Biasing:

    • Apply a gate-emitter voltage (Vge) of at least 15V to fully turn on the transistor.
    • Keep Vge within the safe operating range to avoid damage.
  3. Operating Conditions:

    • Do not exceed the maximum collector current (Ic) or collector-emitter voltage (Vce).
    • Monitor the junction temperature (Tj) to prevent overheating.
  4. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Avoid exposure to extreme temperatures outside the storage temperature range.
  5. Handling:

    • Handle with care to avoid mechanical stress.
    • Use appropriate ESD protection to prevent damage from static electricity.
  6. Testing:

    • Use a suitable test setup to verify the parameters before integrating into a circuit.
    • Test under controlled conditions to ensure reliable operation.
  7. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Use protective equipment as necessary.
(For reference only)

 Inquiry - IXXH30N60B3D1