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Specifications
SKU: 12607152
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Rated Voltage | VDS | - | 600 | - | V | - |
| Continuous Drain Current (TC=25°C) | ID | - | 20 | - | A | - |
| Continuous Drain Current (TC=100°C) | ID | - | 14 | - | A | - |
| Pulse Drain Current (10ms, 1% Duty Cycle) | ID(p) | - | 80 | - | A | - |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Gate Threshold Voltage | VGS(th) | 2.0 | 3.5 | 4.5 | V | ID=250μA, TJ=25°C |
| On-State Resistance at 25°C | RDS(on) | - | 0.18 | - | Ω | VGS=10V, ID=20A |
| On-State Resistance at 100°C | RDS(on) | - | 0.25 | - | Ω | VGS=10V, ID=14A |
| Total Gate Charge | QG | - | 70 | - | nC | - |
| Input Capacitance | Ciss | - | 1500 | - | pF | VDS=600V, f=1MHz |
| Output Capacitance | Coss | - | 220 | - | pF | VDS=600V, f=1MHz |
| Reverse Transfer Capacitance | Crss | - | 200 | - | pF | VDS=600V, f=1MHz |
| Junction-to-Case Thermal Resistance | RθJC | - | 0.5 | - | °C/W | - |
| Junction-to-Ambient Thermal Resistance | RθJA | - | 62 | - | °C/W | - |
| Maximum Junction Temperature | TJ(max) | - | - | 175 | °C | - |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C | - |
Instructions for Use:
Operating Conditions:
- Ensure that the drain-source voltage ( V_ ) does not exceed 600V.
- The continuous drain current ( I_D ) should not exceed 20A at 25°C and 14A at 100°C.
- The pulse drain current ( I_D(p) ) can reach up to 80A for a 10ms duration with a 1% duty cycle.
Gate Drive:
- The gate-source voltage ( V_ ) should be within the range of -20V to +20V.
- The gate threshold voltage ( V_{GS(th)} ) is typically between 2.0V and 4.5V at 25°C.
Thermal Management:
- The junction-to-case thermal resistance ( R_{theta JC} ) is 0.5°C/W, and the junction-to-ambient thermal resistance ( R_{theta JA} ) is 62°C/W.
- The maximum junction temperature ( T_J ) should not exceed 175°C.
- Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within safe limits.
Capacitance Considerations:
- The input capacitance ( C_ ) is 1500pF, the output capacitance ( C_ ) is 220pF, and the reverse transfer capacitance ( C_ ) is 200pF. These values are important for designing the gate drive circuit and calculating switching losses.
Storage and Handling:
- Store the device in a dry, cool place within the storage temperature range of -55°C to 150°C.
- Handle the device with care to avoid static discharge, which can damage the sensitive components.
Mounting:
- Ensure that the device is securely mounted to the PCB or heatsink to prevent mechanical stress and ensure good thermal contact.
- Follow the recommended soldering profile and avoid excessive heat during soldering to prevent damage to the device.
Inquiry - IGCM20F60GA/20A600V
