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STP11NM60FD

Specifications

SKU: 12607294

BUY STP11NM60FD https://www.utsource.net/itm/p/12607294.html

Parameter Symbol Test Conditions Min Typical Max Unit
Drain-Source Voltage VDSS - 600 - V
Gate-Source Voltage VGSS -20 - 20 V
Continuous Drain Current ID TC = 25°C - 11 - A
TC = 75°C - 8.4 - A
Gate Charge QG VGS = ±10V - 135 - nC
Input Capacitance Ciss f = 1 MHz - 2900 - pF
Output Capacitance Coss f = 1 MHz - 220 - pF
Total Power Dissipation PTOT TC = 25°C - 210 - W
TC = 75°C - 150 - W
Junction Temperature TJ -55 - 175 °C
Storage Temperature TSTG -55 - 175 °C

Instructions for Use:

  1. Handling and Storage:

    • Store the device in a dry environment to prevent moisture damage.
    • Handle with care to avoid mechanical stress or damage to the leads.
  2. Mounting:

    • Ensure proper thermal management by using appropriate heat sinks if necessary.
    • Follow recommended PCB layout guidelines to minimize parasitic inductances and capacitances.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified limits to avoid damage.
    • Ensure the drain-source voltage (VDSS) does not exceed the maximum rating.
  4. Operation:

    • Operate the device within the specified temperature range to ensure reliable performance.
    • Monitor the junction temperature (TJ) to prevent overheating.
  5. Testing:

    • Use the specified test conditions for accurate parameter measurements.
    • Refer to the datasheet for detailed testing procedures and additional information.
  6. Safety:

    • Follow all safety guidelines and regulations when handling high-voltage and high-power components.
    • Use appropriate protective equipment and grounding techniques to prevent electrical hazards.
(For reference only)

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