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IXGH32N60C

Specifications

SKU: 12607297

BUY IXGH32N60C https://www.utsource.net/itm/p/12607297.html

Parameter Symbol Min Typ Max Unit Conditions/Notes
Collector-Emitter Voltage VCEO - - 600 V Collector open, Tj = 25°C
Emitter-Collector Voltage VEBO - - 7 V Emitter open, Tj = 25°C
Gate-Emitter Voltage VGE -15 - 20 V Tj = 25°C
Continuous Collector Current IC - 32 - A TC = 25°C, Tj = 150°C
Pulse Collector Current IC(rms) - 48 - A tp = 10 ms, Tj = 150°C
Power Dissipation PTOT - - 320 W TC = 25°C, Tj = 150°C
Junction Temperature Tj - - 150 °C Maximum operating temperature
Storage Temperature Tstg -55 - 150 °C Temperature range for storage and operation

Instructions:

  1. Handling and Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Handle with care to avoid mechanical stress or damage to the leads.
  2. Mounting:

    • Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within safe limits.
    • Use a thermal compound between the device and the heatsink to improve thermal conductivity.
  3. Electrical Connections:

    • Connect the collector, emitter, and gate terminals correctly to avoid damage.
    • Ensure that the gate voltage does not exceed the maximum ratings to prevent gate oxide breakdown.
  4. Operation:

    • Operate the device within the specified temperature and current limits to ensure reliable performance.
    • Avoid exceeding the maximum collector-emitter voltage to prevent breakdown.
  5. Testing:

    • Use appropriate test equipment and methods to verify the device parameters.
    • Follow safety guidelines when testing high-voltage and high-current circuits.
  6. Safety:

    • Always use protective equipment when handling high-voltage components.
    • Follow all relevant safety standards and regulations.
(For reference only)

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