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Specifications
SKU: 12607328
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Maximum Collector-Emitter Voltage | VCE(max) | 1000 | V |
| Maximum Emitter-Base Voltage | VEB(max) | 5 | V |
| Maximum Collector Current | IC(max) | 15 | A |
| Maximum Power Dissipation | PT(max) | 120 | W |
| Maximum Junction Temperature | TJ(max) | 150 | °C |
| Storage Temperature Range | TSTG | -55 to 150 | °C |
| DC Current Gain (hFE) | hFE | 20 to 80 | - |
| Transition Frequency | fT | 10 | MHz |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings specified in the table.
- Handle the device with care to avoid mechanical damage.
Mounting:
- Ensure proper heat sinking to manage the power dissipation.
- Use a thermal compound between the transistor and the heat sink for better thermal conductivity.
Biasing:
- The base-emitter voltage (VBE) should be kept within the specified range to avoid damage.
- Use appropriate biasing circuits to ensure stable operation.
Operating Conditions:
- Operate the device within the recommended temperature range to ensure reliable performance.
- Monitor the junction temperature to prevent overheating.
Storage:
- Store the device in a dry, cool place within the specified storage temperature range.
Testing:
- Use a suitable test setup to measure parameters like current gain and transition frequency.
- Ensure that the test conditions do not exceed the maximum ratings.
Soldering:
- Use a controlled soldering process to avoid thermal shock.
- Follow the recommended soldering temperature and time to prevent damage to the device.
Inquiry - 2SB1317
