Specifications
SKU: 12607329
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 80 | V |
Collector-Base Voltage | VCBO | - | - | 80 | V |
Emitter-Base Voltage | VEBO | - | - | 5 | V |
Collector Current | IC | - | - | 15 | A |
Base Current | IB | - | - | 3 | A |
Power Dissipation | PD | - | - | 125 | W |
Junction Temperature | Tj | -20 | - | 150 | °C |
Storage Temperature | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure the transistor is mounted on a heatsink if operating near its maximum power dissipation to maintain junction temperature within safe limits.
- Use thermal compound between the transistor and heatsink to improve heat transfer.
Biasing:
- Proper biasing is crucial to avoid saturation or cutoff conditions. Ensure the base current (IB) is sufficient to drive the collector current (IC) but not excessive to prevent overheating.
- For linear applications, use negative feedback to stabilize the operating point.
Overvoltage Protection:
- Protect the transistor from voltage spikes by using appropriate clamping diodes or transient voltage suppressors (TVS).
Current Limiting:
- Use a current-limiting resistor in series with the base to prevent excessive base current which can damage the transistor.
Storage:
- Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
- Handle with care to avoid mechanical damage and static discharge.
Testing:
- Before installation, test the transistor using a multimeter or a dedicated transistor tester to ensure it meets the specified parameters.
Safety:
- Always follow safety guidelines when working with high voltages and currents to prevent injury or equipment damage.
Inquiry - 2SD1975