Share:


2SD1975

Specifications

SKU: 12607329

BUY 2SD1975 https://www.utsource.net/itm/p/12607329.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 80 V
Collector-Base Voltage VCBO - - 80 V
Emitter-Base Voltage VEBO - - 5 V
Collector Current IC - - 15 A
Base Current IB - - 3 A
Power Dissipation PD - - 125 W
Junction Temperature Tj -20 - 150 °C
Storage Temperature Tstg -55 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure the transistor is mounted on a heatsink if operating near its maximum power dissipation to maintain junction temperature within safe limits.
    • Use thermal compound between the transistor and heatsink to improve heat transfer.
  2. Biasing:

    • Proper biasing is crucial to avoid saturation or cutoff conditions. Ensure the base current (IB) is sufficient to drive the collector current (IC) but not excessive to prevent overheating.
    • For linear applications, use negative feedback to stabilize the operating point.
  3. Overvoltage Protection:

    • Protect the transistor from voltage spikes by using appropriate clamping diodes or transient voltage suppressors (TVS).
  4. Current Limiting:

    • Use a current-limiting resistor in series with the base to prevent excessive base current which can damage the transistor.
  5. Storage:

    • Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
    • Handle with care to avoid mechanical damage and static discharge.
  6. Testing:

    • Before installation, test the transistor using a multimeter or a dedicated transistor tester to ensure it meets the specified parameters.
  7. Safety:

    • Always follow safety guidelines when working with high voltages and currents to prevent injury or equipment damage.
(For reference only)

 Inquiry - 2SD1975