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BD243C.

Specifications

SKU: 12607563

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Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V
Collector-Base Voltage VCBO 80 V
Emitter-Base Voltage VEBO 5 V
Continuous Collector Current IC 15 A
Power Dissipation PD 125 W
Junction Temperature TJ -50 to 150 °C
Storage Temperature Range TSTG -65 to 150 °C
Transition Frequency fT 2.5 MHz

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage the power dissipation, especially when operating at high currents.
    • Use insulated mounting hardware to avoid short circuits.
  2. Biasing:

    • Apply a suitable base current (IB) to control the collector current (IC). The typical hFE (current gain) is around 25 to 100.
    • Ensure the base-emitter voltage (VBE) is within the specified range to avoid damage.
  3. Protection:

    • Use a series resistor with the base to limit the base current and prevent thermal runaway.
    • Consider adding a flyback diode across inductive loads to protect against voltage spikes.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
    • Use thermal paste between the transistor and the heatsink to improve heat transfer.
  5. Storage:

    • Store the transistor in a dry, cool place within the temperature range of -65°C to 150°C.
    • Handle with care to avoid mechanical stress or static discharge.
  6. Testing:

    • Before installation, test the transistor using a multimeter to check for continuity and proper operation.
    • Verify the circuit design and connections to ensure correct biasing and operation.
  7. Safety:

    • Always disconnect the power supply before making any changes to the circuit.
    • Use appropriate personal protective equipment (PPE) when handling high-power components.
(For reference only)

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