Specifications
SKU: 12607563
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 80 | V |
Collector-Base Voltage | VCBO | 80 | V |
Emitter-Base Voltage | VEBO | 5 | V |
Continuous Collector Current | IC | 15 | A |
Power Dissipation | PD | 125 | W |
Junction Temperature | TJ | -50 to 150 | °C |
Storage Temperature Range | TSTG | -65 to 150 | °C |
Transition Frequency | fT | 2.5 | MHz |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to manage the power dissipation, especially when operating at high currents.
- Use insulated mounting hardware to avoid short circuits.
Biasing:
- Apply a suitable base current (IB) to control the collector current (IC). The typical hFE (current gain) is around 25 to 100.
- Ensure the base-emitter voltage (VBE) is within the specified range to avoid damage.
Protection:
- Use a series resistor with the base to limit the base current and prevent thermal runaway.
- Consider adding a flyback diode across inductive loads to protect against voltage spikes.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
- Use thermal paste between the transistor and the heatsink to improve heat transfer.
Storage:
- Store the transistor in a dry, cool place within the temperature range of -65°C to 150°C.
- Handle with care to avoid mechanical stress or static discharge.
Testing:
- Before installation, test the transistor using a multimeter to check for continuity and proper operation.
- Verify the circuit design and connections to ensure correct biasing and operation.
Safety:
- Always disconnect the power supply before making any changes to the circuit.
- Use appropriate personal protective equipment (PPE) when handling high-power components.
Inquiry - BD243C.