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2N6488G

Specifications

SKU: 12608068

BUY 2N6488G https://www.utsource.net/itm/p/12608068.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 800 V
Collector-Base Voltage VCBO - - 800 V
Emitter-Base Voltage VEBO - - 7 V
Collector Current IC - - 8 A
Base Current IB - - 0.8 A
Power Dissipation PT - - 125 W
Junction Temperature TJ - - 150 °C
Storage Temperature TSTG -55 - 150 °C
Thermal Resistance (J-C) RθJC - 1.5 - °C/W

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings specified in the table.
    • Handle the device with care to avoid mechanical damage.
  2. Mounting:

    • Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within safe limits.
    • Use appropriate mounting hardware to secure the device.
  3. Electrical Connections:

    • Connect the collector, base, and emitter terminals correctly to avoid damage.
    • Use suitable wire gauges to handle the current levels.
  4. Operating Conditions:

    • Operate the device within the recommended operating conditions to ensure reliable performance.
    • Monitor the junction temperature to prevent overheating.
  5. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Keep the device away from direct sunlight and extreme temperatures.
  6. Testing:

    • Use a multimeter or an appropriate testing device to verify the functionality of the transistor.
    • Follow standard testing procedures to avoid damaging the device.
  7. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Use protective equipment such as gloves and goggles when handling the device.
(For reference only)

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