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IRGB4062D

Specifications

SKU: 12608890

BUY IRGB4062D https://www.utsource.net/itm/p/12608890.html

Parameter Symbol Min Typ Max Unit Condition
Continuous Drain Current ID - 18 - A Tc = 25°C
Pulse Drain Current ICM - 36 - A t = 10 μs, IGBT
Collector-Emitter Voltage VCES - 600 - V
Gate-Emitter Voltage VGE -15 - 15 V
Total Power Dissipation PTOT - 210 - W Tc = 25°C, τ = 10 ms
Junction Temperature TJ -40 - 150 °C
Storage Temperature TSTG -40 - 150 °C
Thermal Resistance, Junction to Case RθJC - 0.7 - °C/W

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper handling to avoid static damage.
    • Mount the device on a heatsink to manage thermal resistance effectively.
  2. Electrical Connections:

    • Connect the collector (C) to the high voltage side of the circuit.
    • Connect the emitter (E) to the low voltage side or ground.
    • Apply the gate (G) voltage carefully to control the switching operation.
  3. Thermal Management:

    • Use a heatsink with adequate thermal conductivity to maintain the junction temperature within safe limits.
    • Ensure good thermal contact between the device and the heatsink.
  4. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table.
    • Operate within the recommended operating conditions to ensure reliability and longevity.
  5. Pulse Operation:

    • For pulse applications, ensure that the pulse duration and frequency do not exceed the safe operating area (SOA) of the device.
  6. Storage and Transportation:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Handle with care during transportation to avoid mechanical stress.
  7. Testing and Troubleshooting:

    • Use appropriate test equipment to verify the functionality of the device.
    • If issues arise, check for proper connections, correct voltage levels, and thermal management.
(For reference only)

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