Share:


2SD1591

Specifications

SKU: 12609282

BUY 2SD1591 https://www.utsource.net/itm/p/12609282.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage Vceo - - 400 V
Emitter-Base Voltage Vebo - - 5 V
Collector Current Ic - - 3 A
Base Current Ib - - 0.3 A
Power Dissipation Ptot - - 65 W
Junction Temperature Tj -55 - 150 °C
Storage Temperature Range Tstg -55 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.
  2. Biasing:

    • Apply the base current (Ib) carefully to avoid exceeding the maximum base current limit.
    • Ensure the collector current (Ic) does not exceed the maximum rating to prevent damage.
  3. Operating Conditions:

    • Do not exceed the maximum collector-emitter voltage (Vceo) to avoid breakdown.
    • Keep the junction temperature (Tj) within the specified range to ensure reliable operation.
  4. Storage:

    • Store the transistor in a dry environment to prevent moisture damage.
    • Avoid exposure to extreme temperatures outside the storage temperature range (Tstg).
  5. Handling:

    • Handle with care to avoid mechanical stress on the leads.
    • Use appropriate ESD protection to prevent damage from static electricity.
  6. Testing:

    • Test the transistor under controlled conditions to verify its parameters.
    • Use a suitable test setup to measure the collector-emitter voltage, base current, and collector current accurately.
(For reference only)

 Inquiry - 2SD1591