Specifications
SKU: 12609282
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | Vceo | - | - | 400 | V |
Emitter-Base Voltage | Vebo | - | - | 5 | V |
Collector Current | Ic | - | - | 3 | A |
Base Current | Ib | - | - | 0.3 | A |
Power Dissipation | Ptot | - | - | 65 | W |
Junction Temperature | Tj | -55 | - | 150 | °C |
Storage Temperature Range | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use a thermal compound between the transistor and the heat sink for better thermal conductivity.
Biasing:
- Apply the base current (Ib) carefully to avoid exceeding the maximum base current limit.
- Ensure the collector current (Ic) does not exceed the maximum rating to prevent damage.
Operating Conditions:
- Do not exceed the maximum collector-emitter voltage (Vceo) to avoid breakdown.
- Keep the junction temperature (Tj) within the specified range to ensure reliable operation.
Storage:
- Store the transistor in a dry environment to prevent moisture damage.
- Avoid exposure to extreme temperatures outside the storage temperature range (Tstg).
Handling:
- Handle with care to avoid mechanical stress on the leads.
- Use appropriate ESD protection to prevent damage from static electricity.
Testing:
- Test the transistor under controlled conditions to verify its parameters.
- Use a suitable test setup to measure the collector-emitter voltage, base current, and collector current accurately.
Inquiry - 2SD1591