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2SD2531

Specifications

SKU: 12609607

BUY 2SD2531 https://www.utsource.net/itm/p/12609607.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCE(max) - - 800 V
Emitter-Base Voltage VEB(max) -6 - 6 V
Collector Current IC(max) - - 4 A
Base Current IB(max) - - 0.4 A
Power Dissipation PT(max) - - 90 W
Junction Temperature TJ(max) - - 150 °C
Storage Temperature Range TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage the power dissipation.
    • Use insulated mounting hardware to avoid electrical shorts.
  2. Biasing:

    • Apply the base current (IB) carefully to control the collector current (IC).
    • Ensure that the base-emitter voltage (VEB) does not exceed the maximum ratings.
  3. Operating Conditions:

    • Do not exceed the maximum collector-emitter voltage (VCE(max)) to prevent breakdown.
    • Keep the junction temperature (TJ) within the specified range to avoid thermal damage.
  4. Storage:

    • Store the device in a dry, cool place within the storage temperature range (TSTG).
  5. Handling:

    • Handle with care to avoid mechanical stress.
    • Use appropriate ESD protection to prevent damage from static electricity.
  6. Testing:

    • Perform initial testing at low currents and voltages to ensure proper operation before applying full load conditions.
  7. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Use protective equipment such as gloves and goggles as necessary.
(For reference only)

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