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2SA1075

Specifications

SKU: 12610099

BUY 2SA1075 https://www.utsource.net/itm/p/12610099.html

Parameter Symbol Min Typ Max Unit Condition
Collector-Emitter Voltage VCE - - 60 V -
Emitter-Base Voltage VEB -4.5 - 5.5 V -
Collector Current IC - - 1.5 A -
Base Current IB - - 0.15 A -
Power Dissipation PT - - 625 mW TA = 25°C
Operating Temperature TOP -55 - 150 °C -
Storage Temperature TSTG -65 - 200 °C -
Transition Frequency fT - 300 - MHz IC = 10 mA, VCE = 10 V
DC Current Gain hFE 30 100 300 - IC = 10 mA, VCE = 10 V

Instructions for Use:

  1. Mounting:

    • Ensure that the 2SA1075 is mounted on a suitable heatsink if it will be operating near its maximum power dissipation.
    • Use thermal grease between the transistor and the heatsink to improve heat transfer.
  2. Biasing:

    • Proper biasing is crucial to avoid saturation or cutoff conditions. Use a voltage divider network to set the base voltage.
    • Ensure that the base current (IB) is sufficient to drive the collector current (IC) but not so high as to exceed the maximum base current rating.
  3. Protection:

    • Include a series resistor with the base to limit the base current.
    • Use a reverse-biased diode across the collector and emitter to protect against inductive loads.
  4. Temperature Management:

    • Monitor the operating temperature to ensure it stays within the specified range.
    • If operating at high temperatures, consider derating the power dissipation to prevent overheating.
  5. Storage:

    • Store the 2SA1075 in a dry, cool place to avoid damage from moisture and extreme temperatures.
    • Handle the transistor with care to avoid static discharge, which can damage the device.
  6. Testing:

    • Before mounting the transistor, test it using a multimeter to ensure it is functioning correctly.
    • Verify the circuit connections and power supply before applying power to the circuit.
(For reference only)

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