Share:


2N6474

Specifications

SKU: 12611005

BUY 2N6474 https://www.utsource.net/itm/p/12611005.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCEO - - 1000 V
Emitter-Base Voltage VEBO - - 5 V
Collector-Base Voltage VCBO - - 1000 V
Collector Current IC - - 10 A
Base Current IB - - 1 A
Power Dissipation PT - - 125 W
Operating Temperature TA -55 - 150 °C
Storage Temperature TSTG -65 - 150 °C
Thermal Resistance (Junction to Case) RθJC - 1.5 - °C/W

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2N6474 with care to avoid damage to the leads and the device itself.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
  2. Mounting:

    • Ensure that the mounting surface is clean and flat to ensure good thermal contact.
    • Apply a thin layer of thermal compound between the device and the heat sink to improve heat dissipation.
    • Tighten the mounting screws to the recommended torque to avoid over-tightening, which can damage the device.
  3. Biasing:

    • Ensure that the base current (IB) is sufficient to fully turn on the transistor and avoid saturation issues.
    • Use appropriate biasing circuits to maintain stable operation over temperature variations.
  4. Heat Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rated temperature.
    • Use a heatsink if necessary to keep the temperature within safe limits.
  5. Testing:

    • Test the device under controlled conditions to verify its performance before integrating it into the final circuit.
    • Use a multimeter or an oscilloscope to check the voltage and current levels at various points in the circuit.
  6. Storage:

    • Store the 2N6474 in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the devices in their original packaging until ready for use to protect them from physical damage and moisture.
(For reference only)

 Inquiry - 2N6474