Specifications
SKU: 12611005
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 1000 | V |
Emitter-Base Voltage | VEBO | - | - | 5 | V |
Collector-Base Voltage | VCBO | - | - | 1000 | V |
Collector Current | IC | - | - | 10 | A |
Base Current | IB | - | - | 1 | A |
Power Dissipation | PT | - | - | 125 | W |
Operating Temperature | TA | -55 | - | 150 | °C |
Storage Temperature | TSTG | -65 | - | 150 | °C |
Thermal Resistance (Junction to Case) | RθJC | - | 1.5 | - | °C/W |
Instructions for Use:
Handling Precautions:
- Handle the 2N6474 with care to avoid damage to the leads and the device itself.
- Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
Mounting:
- Ensure that the mounting surface is clean and flat to ensure good thermal contact.
- Apply a thin layer of thermal compound between the device and the heat sink to improve heat dissipation.
- Tighten the mounting screws to the recommended torque to avoid over-tightening, which can damage the device.
Biasing:
- Ensure that the base current (IB) is sufficient to fully turn on the transistor and avoid saturation issues.
- Use appropriate biasing circuits to maintain stable operation over temperature variations.
Heat Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rated temperature.
- Use a heatsink if necessary to keep the temperature within safe limits.
Testing:
- Test the device under controlled conditions to verify its performance before integrating it into the final circuit.
- Use a multimeter or an oscilloscope to check the voltage and current levels at various points in the circuit.
Storage:
- Store the 2N6474 in a dry, cool place away from direct sunlight and sources of heat.
- Keep the devices in their original packaging until ready for use to protect them from physical damage and moisture.
Inquiry - 2N6474